We report for the first time the existence of the titanium nitride chloride (TiNCl) compound in low-temperature (400 °C) low-pressure chemical vapor deposition (LPCVD) TiN films deposited using TiCl4/NH3 chemistry. Thin-film x-ray diffraction and Auger electron spectroscopy was used in the film characterization. Physical, chemical, and electrical properties of the resulting low-temperature LPCVD TiN films are discussed.

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Thin film properties of LPCVD TiN barriers deposited on Si(100), using TiCl4 and NH3 as reactants, were investigated as a function of deposition temperature between 400 °C and 700 °C. The TiN film chemistry and film composition were studied by AES and RBS techniques, while the microstructural properties (grain size, lattice parameter and texture) were evaluated by XRD. The TiN deposition rates and film resistivities were also determined. Finally the film properties of the TiN barriers as determined by surface analysis were related to the process parameters.

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