Raman Scattering Spectra of InS under Pressure

Takarabe, Kenichi

doi:10.1002/pssb.2221430151

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1999

2021

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Cited by 3 publications

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“…They proposed that the initial orthorhombic phase of InS transforms into the calomel type (Hg 2 Cl 2 ) structure under pressures of P 7^1 GPa. Subsequent measurements of the electrical resistance [2], Raman spectra, optical properties and lattice parameters [3,4] show certain anomalies between 2.5 and 5 GPa. In a previous article [5], we have reported the variation of the Raman frequencies and the lattice parameters of InS as a function of pressure up to 30 and 16 GPa, respectively.…”

Section: Introductionmentioning

confidence: 98%

Temperature dependence of the Raman-active phonon frequencies in indium sulfide

Gasanly

Özkan

Aydınlı

et al. 1999

Solid State Communications

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Cataloged from PDF version of article.The temperature dependence of the Raman-active mode frequencies in indium sulfide was measured in the range from 10 to 300 K. The analysis of the temperature dependence of the A(g) intralayer optical modes show that Raman frequency shift results from the change of harmonic frequency with volume expansion and anharmonic coupling to phonons of other branches. The pure-temperature contribution (phonon-phonon coupling) is due to three- and four-phonon processes. (C) 1999 Elsevier Science Ltd. All rights reserved

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Section: Introductionmentioning

confidence: 98%