Raman spectroscopic study on {100} facet of boron-doped chemical-vapour-deposited diamond crystals with Fano line fitting

Abstract

We have investigated polarized Raman spectra on the {100} facet of B-doped CVD diamond single crystals grown under different diborane additions in the gas phase. An asymmetrical feature was observed on the one-phonon Raman line shape of B-doped diamond crystal which depended on the boron concentration. We have performed Fano line fitting for each one-phonon line of the Raman components. Fano parameters which were calculated from Fano line fitting quantitatively represented the asymmetry of the one-phonon line. The relation between Fano parameters and boron concentrations obtained in this study can predict a certain amount of boron concentration of B-doped diamond. The difference of the Fano asymmetric parameters q between that obtained from 100 and 110 decreased with increasing boron concentration. This tendency was similar to that observed in the relation between the crystallinity and boron concentration.We suggest that the asymmetry of the one-phonon line is dominantly induced by crystalline disorder with boron incorporation.

A detailed analysis of the Raman spectra in superconducting boron doped nanocrystalline diamond

“…The lower doping level in Ref. [15] is confirmed by the higher Ω 0 resonant wavenumber, as the downshift is correlated with the boron incorporation [14].…”

“…The lower doping level in Ref. 15 is confirmed by the higher Ω 0 resonant wavenumber, as the downshift is correlated with the boron incorporation 14. (Note that the boron content is not equivalent to the carrier concentration, as boron dimers present in the material do not contribute to free carrier concentration 13.…”

“…BDD was confirmed to be an example of Mott's metal 10 above the threshold carrier concentration of $n_{{\rm c}} \approx 2- 3 \times 10^{20} \,{\rm cm}^{- 3} $ 11–13. The onset of metallic conductivity (and the superconductivity) in BDD can be followed by the change of the zone‐center phonon (ZCP) Raman peak of diamond 14, 15. Interference between the ZCP and the continuum of electronic transitions can occur in the Raman signal of BDD 16.…”

A chemical coating strategy for assembling a boron-doped diamond anode towards electrocatalytic degradation of late landfill leachate

“…Moreover, the asymmetry of diamond peaks is caused by the Fano effect caused by doped boron atoms. 41 Indeed, the boron-doped diamond electrode on silicon substrate was successfully conducted and expected to contribute excellent electrochemical degradation ability of late landll leachate. Before assembling electrochemical degradation ability of late landll leachate, the electrochemical properties of BDD electrode were tested and analyzed through CV, EIS, and LSV curves in Fig.…”

Investigating the Nucleation and Growth of Electrodeposited Pt on Polycrystalline Diamond Electrodes

“…39,40 This heterogeneity in electronic properties, hence electrochemical activ-ity, is attributed to the variability in the boron-doping level and hydrogen content within a film. [19][20][21] Polycrystalline diamond films are not doped homogeneously, as has been revealed by secondaryion mass spectrometry analysis 51 and Raman microprobe imaging. 52 The fraction of the total area of a film that exhibits high electrical conductivity and high electrochemical activity ͓e.g., Fe͑CN͒ 6 −3/−4 ͔ increases with the boron-doping level but remains inhomogeneous.…”