Random telegraph noise in GaN-based light-emitting diodes

Kang, Taewook; Park, J.; Lee, J.-K.; Kim, Geehyun; Woo, Dong Soo; Son, J. K.; Lee, J.-H.; Park, B.-G.; Shin, Hyungcheol

doi:10.1049/el.2011.1439

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…An RTN current signal is defined as the current signal that exhibits stochastic fluctuations between two or more levels at random and unpredictable times [ 7 ] ; this phenomenon has been observed in multiple solid‐state electronic devices (e.g., point contact diodes, [ 8 ] metal‐oxide‐semiconductor field‐effect transistors [ 9 ] ), and it is related to the random capture and emission of charge carriers at the atomic defects in dielectrics and semiconductors, as well as at their interfaces with metals. [ 10 ] Two‐level RTN signals are produced by one single defect within the entire MIM‐like memristor, [ 11 ] while multilevel RTN signals are formed by more than one.…”

Section: Introductionmentioning

confidence: 99%

Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study

Zanotti

Wang

et al. 2021

Adv Funct Materials

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Some memristors with metal/insulator/metal (MIM) structure have exhibited random telegraph noise (RTN) current signals, which makes them ideal to build true random number generators (TRNG) for advanced data encryption. However, there is still no clear guide on how essential manufacturing parameters like materials selection, thicknesses, deposition methods, and device lateral size can influence the quality of the RTN signal. In this paper, an exhaustive statistical analysis on the quality of the RTN signals produced by different MIM‐like memristors is reported, and straightforward guidelines for the fabrication of memristors with enhanced RTN performance are presented, which are: i) Ni and Ti electrodes show better RTN than Au electrodes, ii) the 50 μm × 50 μm devices show better RTN than the 5 μm × 5 μm ones, iii) TiO2 shows better RTN than HfO2 and Al2O3, iv) sputtered‐oxides show better RTN than ALD‐oxides, and v) 10 nm thick oxides show better RTN than 5 nm thick oxides. The RTN signals recorded have been used as entropy sources in high‐throughput TRNG circuits, which have passed the randomness tests of the National Institute of Standards and Technology. The work can serve as a useful guide for materials scientists and electronic engineers when fabricating MIM‐like memristors for RTN applications.

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Section: Introductionmentioning

confidence: 99%

Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study

Zanotti

Wang

et al. 2021

Adv Funct Materials

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“…Through several applications using RTN experimental results, we have made progresses in solving reliability problems in the MOS structure. In the case of the MQW structure based on GaN/InGaN pairs, there was some study on observing and reporting the RTN phenomenon [9]. However, the study about the accurate extraction of the location and the energy level of the trap inside the MQW is rarely progressed.…”

Section: Experimental Methodsmentioning

confidence: 99%

Extraction of Location and Energy Level of the Trap Causing Random Telegraph Noise at Reverse-Biased Region in GaN-Based Light-Emitting Diodes

Park

Kang

Son

et al. 2012

IEEE Trans. Electron Devices

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In order to analyze the trap in the multi-quantum well (MQW) consisting of a GaN-InGaN pair, the extraction of the location and energy level of the trap using random-telegraph-noise experiment was presented. Through the simplification of the band diagram of the complex MQW into an approximate structure, the equation for the location and the energy level of the trap was expressed as simply as possible. As a result of the extraction, we found that the traps of each sample are located very close to p-GaN or n-GaN interfaces.Index Terms-Defect, Fermi level, light-emitting diode (LED), multiple-quantum well (MQW), nonradiative recombination, random telegraph noise (RTN), trap, tunneling.

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“…The captured electron affects the channel through carrier number and mobility fluctuation. In case of the LEDs based on p-n junction, as the reverse bias voltage is applied, the electron tunneling through the MQW which consists of GaN/InGaN, contributes to the reverse current [2]. In the tunneling process, the electron is captured into the trap inside the MQW, while it passes through a potential barrier.…”

Section: Applied Materials and Electronics Engineeringmentioning

confidence: 99%

Defect Characterization Using Random Telegraph Noise in GaN-Based Light-Emitting Diodes

Park

Kang

Woo

et al. 2011

AMR

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In order to investigate the influence of the traps which exist in the multi-quantum-well (MQW) of GaN-based light-emitting diodes (LEDs), we analyzed the output current fluctuation known as random telegraph noise (RTN) at reverse-biased region. We could find the two-level current fluctuations at two samples (S1, S2) and the low-level average time (τlow) is larger than the high-level average time (τhigh) at both samples, which means that the energy level of the trap is located below the mid-gap of used material. With increasing a reverse bias voltage, in case of S1, τhigh becomes higher and τlow becomes lower as the energy level of the trap becomes relatively higher in reference to quasi Fermi level, EFn. On the contrary, the τhigh becomes lower and the τlow becomes higher at S2 as the energy level of the trap becomes relatively lower in reference to quasi Fermi level, EFp.

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Random telegraph noise in GaN-based light-emitting diodes

Cited by 4 publications

References 8 publications

Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study

Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study

Extraction of Location and Energy Level of the Trap Causing Random Telegraph Noise at Reverse-Biased Region in GaN-Based Light-Emitting Diodes

Defect Characterization Using Random Telegraph Noise in GaN-Based Light-Emitting Diodes

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