Range parameters of boron implanted into silicon

Ryssel, H.; Prinke, G.; Haberger, K.; Hoffmann, K.; Müller, Karl; Henkelmann, R.

doi:10.1007/bf00900395

Cited by 36 publications

(9 citation statements)

References 8 publications

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“…In the lower energy region, the skewness is close to zero and the kurtosis close to 3. When these values for the third and fourth moment are used in a Pearson IV distribution, a Gaussian distribution results [6]. The TRIM results of the skewness match closely with the experimental data, as can be seen in fig.…”

Section: (2)supporting

confidence: 70%

“…Calculations show that their influence on the fit is very small, as long as the value of the kurtosis /3 has at least twice the value of &,, the minimum value of the kurtosis to get a Pearson type IV distribution [6]. The standard deviation data extracted from CV meaIn fig.…”

Section: The Fit Proceduresmentioning

confidence: 98%

“…Once the profiles had been obtained, they were fitted to a Pearson IV distribution, because this type of distribution allows a good fit to experimental profiles [5,6] and the resulting moments can easily be ~plemented in process-simulation programs [7,8].…”

Section: The Fit Proceduresmentioning

confidence: 99%

“…Three different measuring methods have been used: capacitance-voltage (CV) profiling, secondary ion mass spectrometry (SIMS) and nuclear reaction analysis (NRA). The experimental results are fitted to a Pearson IV distribution [5,6] from which four parameters, the moments of the distribution, are then extracted. Once these moments have been obtained, it is easy to implement them in programs such as SUPREM [7] or ICECREAM [8], in order to obtain reliable process simulations.…”

Section: Introductionmentioning

confidence: 99%

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Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV

Oosterhoff

1988

Nuclear Instruments and Methods in Physics Research Section B:

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Boron and phosphorus were implanted in p-type and n-type silicon wafers in the energy range from 0.1 to 1.5 MeV. Three different methods were used to determine the distribution of the ions: SIMS, CV and NRA. The results were fitted to a Pearson IV distribution in order to extract moments for describing the distributions analytically. The projected ranges agree well with the theoretical values. Deviations are observed at higher energies. Projected range standard deviations are significantly greater than the tabulated values. The skewness clearly deviates from available tabulated data, although the same trend is observed.

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Section: (2)supporting

confidence: 70%

Section: The Fit Proceduresmentioning

confidence: 98%

Section: The Fit Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV

Oosterhoff

1988

Nuclear Instruments and Methods in Physics Research Section B:

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“…In the most topical cases, doping profiles in an amorphous solid can be acceptably characterized by first four moments [5]. So, one can parameterize the numerically calculated profiles by analytical distribution functions of Pearson type IV [6,7] well studied in mathematical statistics.…”

Section: Introductionmentioning

confidence: 99%

Enhanced phenomenological models of ion channeling contribution to doping profiles in crystals

Bratchenko¹,

Dyuldya²,

Bakai³

2009

Condens. Matter Phys.

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New phenomenological models are proposed to describe the effect of an ordered lattice structure of crystalline targets on the as-implanted doping profiles of low-energy heavy ions. The models account for the channeling kinetics and clarify the effect of bi-directional transitions of ions between random-like and channeled modes of motion on the target depth dependencies of dopant concentration. They also incorporate a simple model of the target radiation damaging effect on doping profiles. The presented results of model validation against the experimental and Monte Carlo computer simulation data and the comparative analysis of the capabilities of the proposed and the existing models show that the application of a more physically grounded approach allows us to improve the quality of doping profile description. The theoretical models developed are useful for obtaining physical parameters of low-energy ion channeling kinetics from the experimental data.

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Simulation of silicon semiconductor processing

Pichler

Ryssel

1990

Trans Emerging Tel Tech

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In VLSI development process simulation is needed to understand the interaction between successive process steps and to give input data for device simulation. The goal of this paper is to sketch the present state of process simulation and to give the reader a feeling of the difficulties but also of what can be gained by using such tools. Due to their importance, most attention will be given to the simulation of ion implantation, diffusion, and oxidation

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Range parameters of boron implanted into silicon

Cited by 36 publications

References 8 publications

Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV

Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV

Enhanced phenomenological models of ion channeling contribution to doping profiles in crystals

Simulation of silicon semiconductor processing

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