2022
DOI: 10.1038/s41467-022-30876-6
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Rapid and up-scalable manufacturing of gigahertz nanogap diodes

Abstract: The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned <10 nm nanogaps and flash-lamp annealing to demonstrate rapid manufacturing of nanogap Schottky diodes over arbitrary size substrates operating in 5 G frequencies. These diodes combine low junction capacitance with low turn… Show more

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Cited by 16 publications
(12 citation statements)
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“…4b). For instance, printed ZnO 24 , IGZO 48 , and polymer-based 49 Schottky diodes with an intrinsic cut-off frequency of >100 GHz have been reported, as well as a MoS2-based flexible rectifier and an RF mixer circuits with a cut-off frequency of 10 GHz 44 . These results highlight the viability of planar LAE rectifiers for future RF applications.…”
Section: Recent Developments In Lae Diodesmentioning
confidence: 99%
“…4b). For instance, printed ZnO 24 , IGZO 48 , and polymer-based 49 Schottky diodes with an intrinsic cut-off frequency of >100 GHz have been reported, as well as a MoS2-based flexible rectifier and an RF mixer circuits with a cut-off frequency of 10 GHz 44 . These results highlight the viability of planar LAE rectifiers for future RF applications.…”
Section: Recent Developments In Lae Diodesmentioning
confidence: 99%
“…The diodes were then integrated in energy harvesters comprising antenna, optimized impedance matching network and double half-wave rectifier with cut-off frequency of 3 GHz that could output >1 V dc when placed 2 m away from the transmitter antenna [488]. Recently, record intrinsic cutoff frequencies >100 GHz and extrinsic cutoff frequencies of 42 GHz were demonstrated with Schottky diodes based on solution-processed ZnO [469] and IGZO [489], respectively, using a coplanar 10 nm gap asymmetric electrode structure.…”
Section: Statusmentioning
confidence: 99%
“…Moving beyond CMOS and traditional semiconductors, next-generation RFID and RF energy harvesting will start to leverage the advances in large-area organic semiconductors, which have already unveiled their potential to be implemented in low-cost flexible RF rectifiers [191], [192], [199]. Looking forward, a holistic approach should be followed to tackle simultaneously the existing challenges and drive the technology push:…”
Section: E Large-scale Integration and Active Circuitsmentioning
confidence: 99%