Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In

Pan, Yingjun; Wang, Ti; Shen, Kai; Peng, Ting; Wu, Kui; Zhang, Wenyi; Liu, Chang

doi:10.1016/j.jcrysgro.2010.10.033

Cited by 9 publications

(7 citation statements)

References 18 publications

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“…InN nanocolumns were then grown on sapphire substrates with and without AAO templates for 2 h by radio-frequency molecular beam epitaxy (RF-MBE, SVTA 35-V-2). The temperatures of In source and the substrate were set at the optima 770 and 400 °C, respectively [10]. Prior to the growth, nitridation was performed under 500 W RF-plasma power at 500 °C for 10 min in a nitrogen atmosphere with a flow rate of 2.65 sccm.…”

Section: Methodsmentioning

confidence: 99%

“…However, its low decomposition temperature, impurity-prone surface, and large lattice mismatch with common substrates hinder the further development of InN-based devices [1]. In recent years, many studies focused on the growth of InN nanorods and nanocolumns on c-Al 2 O 3 , glass, Si (100), and Si (111) with or without buffer layers such as GaN, AlN, InGaN, and even low-temperature (LT) InN [5–10]. In general, sapphire is widely used as the substrate for growth of InN because of its availability, large area, high quality, high thermal stability, relatively low cost, and hexagonal symmetry, even though it has a large lattice mismatch with InN [11].…”

Section: Introductionmentioning

confidence: 99%

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Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates

Wang

Zhang

et al. 2017

Nanoscale Res Lett

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InN nanocolumn arrays were grown on c-plane sapphire with and without anodic aluminum oxide (AAO) nanotemplates. The crystalline quality of InN nanocolumns was significantly improved by selective-area growth (SAG) using AAO templates, as verified by X-ray diffraction measurements. Then, InN nanocolumns were transferred onto p-type silicon substrates after etching off the AAO templates. Current–voltage characteristic of the transferred n-InN/p-Si heterojunctions shows on/off ratio as high as 4.65 × 103 at 2 V. This work offers a potential way to grow transferable devices with improving performances.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates

Wang

Zhang

et al. 2017

Nanoscale Res Lett

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“…Mg-doped InN films were grown on c-plane sapphire with GaN buffer layers by using radio-frequency plasma-assisted molecular beam epitaxy (rf-MBE, SVTA 35-V-2). Thin GaN buffer layers, with a thickness of 50 nm, were grown under the optimized conditions with the substrate temperature at 760 °C and Ga source temperature at 1020 °C on c-plane sapphire [ 11 , 12 ]. InN films were then grown for 2 h under the optimized conditions reported previously, i.e., setting the In source temperature at 770 °C, substrate temperature at 450 °C, and N flow rate at 2.65 sccm [ 11 , 12 ].…”

Section: Methodsmentioning

confidence: 99%

Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers

Wang

Zhang

et al. 2016

Nanoscale Res Lett

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InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10−9 A/cm2 at 1 V is obtained. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while Schottky emission dominates at low fields. Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors.

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“…Furthermore, the narrow growth window of InN (between 500 • C and 550 • C) limits device processing. InN nanocolumns have been grown on Si(111) substrates with buffer layers such as Si 3 N 4 [6], GaN, low-temperature InN [7], AlN/-Si 3 N 4 double-layers [8], InN/-Si 3 N 4 double-layers [9], and InGaN [10]. Al 2 O 3 has been widely used as a substrate for heteroepitaxial InN growth despite its insulating property and large a-axis lattice mismatch with InN (~25%).…”

Section: Introductionmentioning

confidence: 99%

Growth of Catalyst-Free Hexagonal Pyramid-Like InN Nanocolumns on Nitrided Si(111) Substrates via Radio-Frequency Metal–Organic Molecular Beam Epitaxy

Chen

Lai

et al. 2019

Crystals

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Hexagonal pyramid-like InN nanocolumns were grown on Si(111) substrates via radio-frequency (RF) metal-organic molecular beam epitaxy (MOMBE) together with a substrate nitridation process. The metal-organic precursor served as a group-III source for the growth of InN nanocolumns. The nitridation of Si(111) under flowing N 2 RF plasma and the MOMBE growth of InN nanocolumns on the nitrided Si(111) substrates were investigated along with the effects of growth temperature on the structural, optical, and chemical properties of the InN nanocolumns. Based on X-ray diffraction analysis, highly <0001>-oriented, hexagonal InN nanocolumns were grown on the nitride Si(111) substrates. To evaluate the alignment of arrays, the deviation angles of the InN nanocolumns were measured using scanning electron microscopy. Transmission electron microscopy analysis indicated that the InN nanocolumns were single-phase wurtzite crystals having preferred orientations along the c-axis. Raman spectroscopy confirmed the hexagonal structures of the deposited InN nanocolumns.

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Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In

Cited by 9 publications

References 18 publications

Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates

Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates

Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers

Growth of Catalyst-Free Hexagonal Pyramid-Like InN Nanocolumns on Nitrided Si(111) Substrates via Radio-Frequency Metal–Organic Molecular Beam Epitaxy

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