Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates

Abstract

InN nanocolumn arrays were grown on c-plane sapphire with and without anodic aluminum oxide (AAO) nanotemplates. The crystalline quality of InN nanocolumns was significantly improved by selective-area growth (SAG) using AAO templates, as verified by X-ray diffraction measurements. Then, InN nanocolumns were transferred onto p-type silicon substrates after etching off the AAO templates. Current–voltage characteristic of the transferred n-InN/p-Si heterojunctions shows on/off ratio as high as 4.65 × 103 at 2 V. This work offers a potential way to grow transferable devices with improving performances.

Microwave‐Assisted Synthesis of Porous Biomolecule‐Incorporated Metal‐Organic Frameworks as Efficient Nanocarriers for Anti‐Cancer Drugs

“…[6,7] Moreover, Cremophor EL often causes adverse effects such as hypersensitivity, neurotoxicity, and nephrotoxicity. [8] Conse-quently, in the past few decades, various methods, including the use of PTX-coated nanoparticles, [9][10][11][12][13] polymers, [14,15] inorganic nanomaterials, [16,17] prodrugs, [17] and mesoporous silica nanoparticles, [18][19][20][21] have been developed to improve the anticancer efficacy of PTX.…”

Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

“…In molecular beam epitaxy (MBE), the growth of InN nanorods with a good selectivity was achieved. However, it is very difficult to control the morphological shape with a well-defined aspect ratio because of the complexity of InN growth kinetics. − The perfect SAG of vertically aligned InN nanorods with a high aspect ratio was newly demonstrated thanks to the hydride vapor-phase epitaxy (HVPE) process . The SAG was performed on SiN-masked Ga-polar GaN/c-Al 2 O 3 templates with circular openings of 200 nm.…”