Rapid Thermal Oxidation and Nitridation

Борисенко, В. Е.; Hesketh, Peter J.

doi:10.1007/978-1-4899-1804-8_6

Rapid Thermal Processing of Semiconductors 1997

DOI: 10.1007/978-1-4899-1804-8_6

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Rapid Thermal Oxidation and Nitridation

В. Е. Борисенко

Peter J. Hesketh

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1999

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Cited by 2 publications

References 145 publications

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Growth characterization of rapid thermal oxides

Wei

Chan³

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inCharacteristics of ultrathin SiO 2 films using dry rapid thermal oxidation and Pt catalyzed wet oxidationThe results of a rapid thermal oxide ͑RTO͒ growth study involving 200 mm Si wafers oxidized in three different oxidation ambients ͑O 2 , N 2 O, and NO͒ at two different pressures ͑100 and 760 Torr͒, and a wide range of oxidation temperatures ͑950-1200°C͒ and times ͑0-480 s͒ are presented in this work. The variable power law is shown to provide an excellent fit to the characteristics. Enhancement in the O 2 RTO over furnace oxidation ͑FO͒ growth rates, continued growth in N 2 O RTO, and growth saturation in NO RTO were observed. Anomalies including higher growth rates at a lower pressure in N 2 O, higher growth rates at lower temperatures and at a lower pressure in NO, as well as higher growth rates in N 2 O and NO than in O 2 were observed. They may be attributable to the competition between the N incorporation rate and the oxide growth rate for predominance, which might in turn be dependent on the temperature, pressure, thickness of and defect density in the initial oxide layer and the amount of N already incorporated. The growth kinetics exhibit Arrhenius relationships. Those for O 2 RTO, O 2 FO, and low pressure N 2 O RTO are similar while those for N 2 O RTO, N 2 O FO, and NO RTO are different. Our results suggest the oxide thickness range within which the oxidation is reaction limited decreases in the order of O 2 RTO, N 2 O RTO, and NO RTO.

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Growth characterization of rapid thermal oxides

Wei

Chan³

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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An XPS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide

Wei

Pan

et al. 1999

MRS Proc.

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Earlier growth studies on the rapid thermal oxidation of silicon in NO (RTNO) were not sufficiently comprehensive and were limited by temperature measurement uncertainty and thermal non-uniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, the RTNO growth characteristics at 100 and 760 Torr, from 900 to 1200°C and from 0 to 480 s were investigated. It was found that the initial growth rate anomalously decreasedwith temperature and pressure. These anomalies were correlated to the evolution of the XPS N 1s spectrum of the RTNO film with oxidation time, temperature and pressure.

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Rapid Thermal Oxidation and Nitridation

Cited by 2 publications

References 145 publications

Growth characterization of rapid thermal oxides

Growth characterization of rapid thermal oxides

An XPS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide

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