Rapid Thermal Processing of Implanted GaN up to 1500°C

Abstract

GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 °C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2×10 -13 cm 2

Quantitative Correlation of Physical and Chemical Properties with Chemical Structure: Utility for Prediction

“…253 Multivariate regression models have been developed to predict the densities of alkanes and monosubstituted alkanes based on the molecular descriptors calculated from the eigenvalues of the bonding orbital-connecting matrix, polarizability effect index (PEI) of alkyl, and Pauling's electronegativity concept. 259 A five-descriptor QSPR model was obtained for 213 compounds with a significant value of R 2 ) 0.992, the rms error 0.0208 g/cm 3 , the average absolute error 0.017 g/cm 3 , and the average relative error 1.85% between experimental and predicted values.…”

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition

“…9) Activation and diffusion of implanted dopants in III-nitrides have also been studied [10][11][12] with the aim of selective area doping and isolation. It is believed the implanted Si and Mg dopants are stable up to 1400 C with an effective diffusion constant no higher than 2 Â 10 À13 cm 2 s À1 .…”

Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides

“…Thus, a profound knowledge of the annealing process, necessary to remove the implantation induced lattice damage and activate the implanted dopants, is essential. Only a few studies exist addressing this problem [3], [4] where mainly electrical properties of the dopants were measured. Here we employ the PAC technique, which delivers information on the immediate lattice surrounding of an implanted probe atom and makes it possible to follow the reconstruction of the lattice from the initial stages on.…”