Ratio of the mean secondary electron generation of backscattered electrons to primary electrons at high electron energy

Xie, Ai-Gen; Zhao, Hu; Wang, Tie-Bang

doi:10.1016/j.nimb.2009.12.026

Cited by 7 publications

(2 citation statements)

References 12 publications

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“…Therefore, the number of backscattered electrons is equal to that of the (100η)% primary electrons. Based on Kanter's theory, [37,38] the backscattered electrons that diffuse from the interior of a material obey a cosine distribution. Thus, from these characteristics and the three processes of SEE and the fact that (100η)% primary electrons and most of the backscattered electrons lose hardly any energy during the course of moving in a material, [31,35,36] it is known that the ratio of the number of internal secondary electrons excited by backscattered electrons to that of internal secondary electrons excited by the (100η)% primary electrons is equal to 2.0.…”

Section: New See Model For δmentioning

confidence: 99%

“…Thus, from these characteristics and the three processes of SEE and the fact that (100η)% primary electrons and most of the backscattered electrons lose hardly any energy during the course of moving in a material, [31,35,36] it is known that the ratio of the number of internal secondary electrons excited by backscattered electrons to that of internal secondary electrons excited by the (100η)% primary electrons is equal to 2.0. [37,38] In other words, the total number of internal secondary electrons excited by backscattered electrons and the (100η)% primary electrons equals three times the number of internal secondary electrons excited by the (100η)% primary electrons. Therefore, from these characteristics and the three processes of SEE, Eq.…”

Section: New See Model For δmentioning

confidence: 99%

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Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Xie¹,

Dong²,

Liu³

2023

Chinese Phys. B

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The formulas for parameters of negative electron affinity semiconductor NEAS with large λ NEASLD are deduced, respectively, λ is the mean escape depth of secondary electrons; And the methods of obtaining parameters such as λ, B, E pom, maximum δ and δ at 100.0 keV≥E po≥1.0 keV of NEASLD with the deduced formulas are presented, respectively, where B is the probability that an internal secondary electron escapes into vacuum upon reaching the emission surface of emitter, δ is secondary electron yield, E po is incident energy of primary electron, E pom is the E po corresponding to maximum δ. The parameters obtained here were analyzed, it can be concluded that several parameters of NEASLD obtained by the methods presented here agree with those obtained by other authors. The relation between secondary electron emission and photo-emission from NEAS with large mean escape depth of excited electrons is investigated, it concludes that the presented method of obtaining λ is a more accurate method of obtaining corresponding parameter of NEAS with large λph, and that the presented method of calculating B at E po > 10.0 keV is a more widely applicable method of obtaining corresponding parameter of NEAS with large λph, λph is the mean escape depth of photo-electrons.

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