Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2

Abstract

The reactions of oxygen false(O2false) with the clean Si(111) and (100) surfaces have been studied at high temperatures (890°–1150°C) for oxygen pressures between 5×10−5 normaland 5×10−2 normalTorr . The critical conditions involving oxygen pressure and substrate temperature which are necessary for the growth of SiO2 to occur on these Si surfaces have been determined, and are found to be independent of substrate orientation and doping type under the conditions studied. The observed critical conditions for growth are consistent with a theoretical model which focuses on the kinetics of SiO2 cluster growth and on the thermodynamics of the competing etching reaction leading to production of normalSiO . Evidence is presented for epitaxial growth on Si(100) of cubic SiO2 , β‐cristobalite.

Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal–oxide–semiconductors

“…(1)) and the competing SiO etching (eqn. (2a)) reaction occur for a bare silicon wafer have been determined experimentally [20][21][22] and are also shown in Fig. 2 (2) is favored and kinetic barriers exist for SiO formation (discussed in detail in section II c).…”

“…where G (1) o is the free energy change of the reaction between reactants and products, all taken to be in their standard state, proceeds in the direction indicated at a temperature of 1300 K. Figure 2 covered silicon surfaces [20][21][22], resulting in a clean (oxide free) Si surface. SiO desorption is described by the following equations…”

Controlled growth of metal-free vertically aligned CNT arrays on SiC surfaces

“…According to the phase diagrams of oxidized Si and SiC surfaces, active oxidation producing partially oxidized silicon, e.g., SiO, occurs at high temperature and low oxygen pressures [32,33]. Under the present treatment condition (1700°C and 10 À5 mbar vacuum), reaction of the out-diffused Si nanoclusters with the dissociated oxygen-containing species should produce SiO nanoclusters at the carbon overlayer/SiC interface, which tend to sublimate into vacuum (Scheme 1).…”

Особенности Процесса Спекания Макропористого Кремния В Атмосфере Аргона

“…Этот диапазон согласуется с данными работы [6], согласно которому в нашем случае, когда парциальное давление O 2 составляет 2 · 10 −6 атм (1.52 · 10 −3 мм рт. ст.…”