Reactive ion beam etching of InP with Cl2

Bösch, M. A.; Coldren, L.A.; Good, E.A.

doi:10.1063/1.92338

Cited by 64 publications

(12 citation statements)

References 7 publications

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“…Anisotropic (68,69) and directional (oblique angles of incidence of ions) (70,71) etch profiles were observed in accord with the concepts of Section 5.5. The role of additives has not been studied to any great extent; however, CCl 2 F 2 /0 2 plasmas (67,70) enhanced GaAs etching in general and over native oxide in particular while H 2 addi tions (67) enhanced oxide etching.…”

Section: 4d Iii-v Materialssupporting

confidence: 81%

Plasma Etching

Mucha¹,

Hess

1983

ACS Symposium Series

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Section: 4d Iii-v Materialssupporting

confidence: 81%

Plasma Etching

Mucha¹,

Hess

1983

ACS Symposium Series

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“…The etching yield showed no significant change as the angle of incidence increased from normal to 40°off-normal, but decreased by 35% at the angle of 60°off-normal. 41,42 Maximum etching yield is observed at normal ion incident angle and decrease in etching yield starts at 30°-40°off-normal angles. This result does not agree with the angular dependence of physical sputtering model 39 with maximum yield at approximately 50°-60°for most materials due to the fact that more energy is deposited at these angles of incidence.…”

Section: Ion-enhanced Etching Yield Versus Flux Ratiomentioning

confidence: 99%

Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine

Chang

Arnold

Zau

et al. 1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

131

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Articles you may be interested inModeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation J. Appl. Phys. 94, 6311 (2003); 10.1063/1.1621713Kinetics and crystal orientation dependence in high aspect ratio silicon dry etching High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer Surface kinetics of ion-enhanced chlorine plasma etching in the low ion energy regime was studied by utilizing Ar ϩ for ion bombardment and Cl and Cl 2 as reactants. The argon ion and chlorine atom ͑molecular͒ fluxes were controlled independently over more than an order of magnitude and at flux levels within an order of magnitude of that typically used in high density plasma processes. The ion-enhanced etching yield was characterized as a function of Ar ion energy, ion flux, neutral-to-ion flux ratio, and the ion incident angle. Possible reaction pathways are proposed and reduced into a two-parameter model which is useable in a profile simulator. The etching yield increases with the increase of flux ratio but gradually saturates at higher flux ratios as the ion flux limits the etching yield. The ion energy dependence was found to scale linearly with ͑ E ion 1/2 ϪE th 1/2 ͒, where the threshold energy E th is found to be 16 eV. The etching yield of Cl is found to be similar to that of Cl 2 at flux ratios below 10, but 4-5 times higher than that of Cl 2 at higher flux ratios. The sticking coefficient of Cl 2 is similar to that of Cl for smaller neutral-to-ion flux ratios where the ion bombardment produces highly reactive surface silicon sites for both atomic and molecular chlorine. At high neutral-to-ion flux ratios, however, the dissociative adsorption of molecular chlorine is slower than the adsorption of atomic chlorine on the highly chlorinated surfaces. The angular dependence of ion-enhanced etching yield was also measured. The etching yield was reduced by approximately 35% when an ion impingement angle was changed from normal impingement to 60°off-normal.

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“…In order to define masked patterns with dimensions on the order of 1 μm, electron beam lithography can be used [95,96]. Also higher definition etched patterns can be obtained by using reactive ion etching [97,98].…”

Section: Masked Ion Implantation Diffusion or Ion Exchangementioning

confidence: 99%

Waveguide Fabrication Techniques

Hunsperger

2009

Integrated Optics

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In Chapter 3, the theoretical considerations relevant to various types of waveguides were discussed. In every case, waveguiding depended on the difference in the index of refraction between the waveguiding region and the surrounding media. A great many techniques have been devised for producing that required index difference. Each method has particular advantages and disadvantages, and no single method can be said to be clearly superior. The choice of a specific technique of waveguide fabrication depends on the desired application, and on the facilities available. In this Chapter, various methods of waveguide fabrication are reviewed, and their inherent features are discussed.

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Reactive ion beam etching of InP with Cl2

Cited by 64 publications

References 7 publications

Plasma Etching

Plasma Etching

Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine

Waveguide Fabrication Techniques

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