1995
DOI: 10.1149/1.2048721
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Reactive Ion Etching of Benzocyclobutene Using a Silicon Nitride Dielectric Etch Mask

Abstract: The feasibility of patterning a cured polymeric film of benzocyclobutene (BCB) using silicon nitride (SIN=) as an etch mask was investigated. Due to the carbon-and silicon-containing composition of BCB, a gas mixture with oxygen-and fluorine-containing components is required, which unfortunately also etches SIN=. Therefore, a reactive ion etching pro-~M cess with high selectivity between the etch rates of the BCB, CYCLOTENE 3022-46, and the SiNx was developed. We have investigated the dependence of the etch ra… Show more

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Cited by 24 publications
(9 citation statements)
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“…4,16 The unidentified residue reported here however, was observed over all ranges of CF 4 to O 2 ratios. At each gas ratio and pressure, two samples were cleaved.…”
Section: Methodsmentioning
confidence: 46%
See 1 more Smart Citation
“…4,16 The unidentified residue reported here however, was observed over all ranges of CF 4 to O 2 ratios. At each gas ratio and pressure, two samples were cleaved.…”
Section: Methodsmentioning
confidence: 46%
“…16,17,19 Aluminum hard masks have also been investigated, however, an additional "sacrificial" layer of polymethylglutarimide (PMGI) was needed under the Al in order to produce the desired sloped sidewalls for vertical electrical connections. Both vertical and 70°sidewall angles, along with etch selectivities of greater than 10:1 have been observed using hard masks of thin Si x N and SiO 2 .…”
Section: Introductionmentioning
confidence: 99%
“…Such etch profiles are preferred in microelectronic applications of BCB for optimum deposition of contact metallizations. 8 They are not useful in waveguide mirror applications since the light would be reflected out of the waveguide and into the substrate. The next step is to optimize the etching conditions to obtain vertical sidewalls.…”
Section: B Ecr-rie Resultsmentioning
confidence: 99%
“…This is due to the inability to convert silicon into the volatile SiF 4 , quickly leading to a silicon rich surface. 13,14 The addition of just 10% SF 6 at 7.5 mTorr and 300 W of ICP and RIE power results in an increase of etch rate to 0.85 lm/min. Above 10% SF 6 concentration, there is a general downward trend in etch rate.…”
Section: B Effect Of Sf 6 Concentrationmentioning
confidence: 99%