Reactive Phase Formation

d’Heurle, F. M.; Lavoie, C.; Gas, P.; Philibert, J.

doi:10.1016/b978-081551501-2.50008-3

Cited by 9 publications

(17 citation statements)

References 112 publications

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“…It is also in agreement with the Cu 3 Au ordered rule [29] which states that in an intermetallic ordered structure the species with the highest diffusion coefficient will be the majority element. However, in contrast to Ni 5 Ge 3 formation where Ni was found to be the sole diffusing species, a substantial amount of Ge diffusion was observed during Pd 2 Ge formation.…”

Section: Discussionsupporting

confidence: 82%

Determination of the dominant diffusing species during nickel and palladium germanide formation

et al. 2012

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Section: Discussionsupporting

confidence: 82%

Determination of the dominant diffusing species during nickel and palladium germanide formation

et al. 2012

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“…Such observations have led to the empirical 'Cu 3 Au-rule' which states that for a binary ordered A m B n system with m=n ! 2 and vacancymediated diffusion the majority component diffuses significantly faster than the minority component (see, for example, d'Heurle and Gas [26] and d'Heurle et al [27]). …”

Section: Comparison With Other Silicidesmentioning

confidence: 97%

Diffusion in molybdenum disilicide

Salamon¹,

Mehrer²

2005

MEKU

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Diffusion in molybdenum disilicideThe diffusion behaviour of the high-temperature material molybdenum disilicide (MoSi 2 ) was completely unknown until recently. In this paper we present studies of Mo selfdiffusion and compare our present results with our already published studies of Si and Ge diffusion in MoSi 2 .Self-diffusion of molybdenum in monocrystalline MoSi 2 was studied by the radiotracer technique using the radioisotope 99 Mo. Deposition of the radiotracer and serial sectioning after the diffusion anneals to determine the concentration-depth profiles was performed using a sputtering device.Diffusion of Mo is a very slow process. In the entire temperature region investigated (1437 to 2173 K), the 99 Mo diffusivities in both principal directions of the tetragonal MoSi 2 crystals obey Arrhenius laws, where the diffusion perpendicular to the tetragonal axis is faster by two to three orders of magnitude than parallel to it. The activation enthalpies for diffusion perpendicular and parallel to the tetragonal axis are Q ? ¼ 468 kJ mol À1 (4.85 eV) and Q k ¼ 586 kJ mol À1 (6.07 eV), respectively. Diffusion of Si and its homologous element Ge is fast and is mediated by thermal vacancies of the Si sublattice of MoSi 2 . The diffusion of Mo is by several orders of magnitude slower than the diffusion of Si and Ge. This large difference suggests that Si and Mo diffusion are decoupled and that the diffusion of Mo likely takes place via vacancies on the Mo sublattice.

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“…Simulations with D i -D GB were also performed and gave very similar profiles. 28 Therefore, As would diffuse in Si rich GBs and, from the "Cu 3 Au" rule, 29,30 we could expect Q GB to be similar to the activation energy of As diffusion in intrinsic Si GBs. Segregation at the GBs and interfaces was not taken into account, thus the coefficients that are found are effective coefficients.…”

Section: Two-dimensional Simulation: Lattice and Gb Diffusion Coefficmentioning

confidence: 97%

Lattice and grain-boundary diffusion of As in Ni2Si

Blum

Portavoce

Mangelinck

et al. 2008

Journal of Applied Physics

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The effect of solute segregation on strain localization in nanocrystalline thin films: Dislocation glide vs. grainboundary mediated plasticity Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111) J. Appl. Phys. 113, 053511 (2013); 10.1063/1.4790597 Effect of Cu and Ag solute segregation on βSn grain boundary diffusivityThe diffusion coefficient of As in 260 nm thick polycrystalline Ni 2 Si layers has been measured both in grains and in grain boundaries ͑GBs͒. As was implanted in Ni 2 Si layers prepared via the reaction between a Si layer and a Ni layer deposited by magnetron sputtering on a ͑100͒ Si substrate covered with a SiO 2 film. The As concentration profiles in the samples were measured using secondary ion mass spectroscopy before and after annealing ͑400-700°C͒. The diffusion coefficients in the grains and the GBs have been determined using two-dimensional finite element simulations based on the Fisher model geometry. For short time annealing ͑1 h͒ and temperatures lower than 600°C, lattice diffusion has not been observed. However, GB diffusion was evidenced for temperatures as low as 400°C. For higher thermal budgets, As diffuses simultaneously in the volume of the grains and in the GBs. Lattice diffusion is characterized by a pre-exponential factor D 0v ϳ 1.5 ϫ 10 −1 cm 2 s −1 and an activation energy Q v ϳ 2.72Ϯ 0.10 eV. In the case of GB diffusion, the triple product of the As segregation coefficient ͑s͒, the GB width ͑␦͒, and the diffusion coefficient ͑D GB ͒ is found to be s␦D GB = 9.0ϫ 10 −3 exp͑−3.07Ϯ 0.15 eV/ kT͒ cm 3 s −1 . Various types of simulations were used in order to support the discussion of the results.

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Reactive Phase Formation

Cited by 9 publications

References 112 publications

Determination of the dominant diffusing species during nickel and palladium germanide formation

Determination of the dominant diffusing species during nickel and palladium germanide formation

Diffusion in molybdenum disilicide

Lattice and grain-boundary diffusion of As in Ni2Si

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