The last three decades
have seen a growing trend toward studying
the interfacial phenomena in complex oxide heterostructures. Of particular
concern is the charge distribution at interfaces, which is a crucial
factor in controlling the interface transport behavior. However, the
study of the charge distribution is very challenging due to its small
length scale and the intricate structure and chemistry at interfaces.
Furthermore, the underlying origin of the interfacial charge distribution
has been rarely studied in-depth and is still poorly understood. Here,
by a combination of aberration-corrected scanning transmission electron
microscopy (STEM) and spectroscopy techniques, we identify the charge
accumulation in the SrMnO
3
(SMO) side of SrMnO
3
/SrTiO
3
heterointerfaces and find that the charge density
attains the maximum of 0.13 ± 0.07 e
–
/unit
cell (uc) at the first SMO monolayer. Based on quantitative atomic-scale
STEM analyses and first-principle calculations, we explore the origin
of interfacial charge accumulation in terms of epitaxial strain-favored
oxygen vacancies, cationic interdiffusion, interfacial charge transfer,
and space-charge effects. This study, therefore, provides a comprehensive
description of the charge distribution and related mechanisms at the
SMO/STO heterointerfaces, which is beneficial for the functionality
manipulation via charge engineering at interfaces.