Real-Time Aging Detection of SiC MOSFETs

Erturk, Feyzullah; Uğur, Enes; Olson, J.B.; Akin, Bilal

doi:10.1109/tia.2018.2867820

Cited by 57 publications

(12 citation statements)

References 14 publications

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“…4. More specifically, [75]- [76] have tried to measure drain-source current through a SiC MOSFET and then use it as a predictive parameter before failure. Alternatively, on-state drain-source resistance rds-on of the SiC MOSFET can be computed from the measured current, which according to [77], provides an informative prediction of its lifespan.…”

Section: Lifetime Predictionmentioning

confidence: 99%

A Review of Megahertz Current Sensors for Megahertz Power Converters

Xin

Liu

et al. 2022

IEEE Trans. Power Electron.

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Within a power converter, multiple currents are usually measured for control, protection, and/or monitoring. They are therefore important sources of information, which must unquestionably be measured accurately to maintain continuous and reliable operation of the power converter. Accurate current measurement has however become tougher with the introduction of wide band-gap (WBG) devices with switching frequency tending towards the Megahertz (MHz) range. Because of that, the installed current sensors must have a significantly widened bandwidth. Moreover, they must be nonintrusive and compact, in order not to degrade fast switching characteristics and high power density of the WBG converter. Presently, these features are not collectively obtainable from existing commercial current sensors. Consequently, many new current sensing techniques have surfaced in the literature for usage with the more demanding MHz power converter. These new techniques, some classical techniques, and their hybrid integrations are now reviewed, after overviewing functionalities made possible by current sensors in a power converter. Last but importantly, some future developmental trends aimed at matching MHz current sensors with MHz power converters are described, before concluding the paper.

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Section: Lifetime Predictionmentioning

confidence: 99%

A Review of Megahertz Current Sensors for Megahertz Power Converters

Xin

Liu

et al. 2022

IEEE Trans. Power Electron.

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“…In order to more accurately measure the waveform of IGSS, the RG value is generally selected as tens of ohms [44], [50], [77]. On the other hand, many research efforts have been devoted to realizing condition monitoring based on IGSS, which can be embedded into commercial gate drivers [64]- [66].…”

Section: A Extraction and Analysis Of Igssmentioning

confidence: 99%

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

Cui

Xin

Liu

et al. 2022

IEEE J. Emerg. Sel. Topics Power Electron.

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To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-circuit (SC) robustness and reliability must be thoroughly evaluated. This paper, therefore, presents an overview of related research methods aiming to meet that objective. Topics reviewed include the non-destructive tester (NDT) used to implement SC faults, extraction and analysis of degradation parameters, and failure analysis of SiC MOSFETs. Concerning the NDT, its design criteria and methods for evaluating SC robustness are discussed. After which, key parameters used to assess SC reliability and methods for investigating degradation mechanisms are discussed and summarized. Finally, failure analysis techniques and their contributions to failure mechanisms are reviewed.

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“…Besides, it has very distinct values for a healthy and aged state. In [86], the author proposed a method for the online aging detection method using the gate leakage current. The block diagram of the proposed method in [86] is illustrated in Figure 12.…”

Section: Monitoring Gate Leakage Currentmentioning

confidence: 99%

“…In [86], the author proposed a method for the online aging detection method using the gate leakage current. The block diagram of the proposed method in [86] is illustrated in Figure 12. The gate leakage current is measured by using the gate resistance.…”

Section: Monitoring Gate Leakage Currentmentioning

confidence: 99%

“…This result warns that gate oxide degradation failure might occur in the near future. It is noted that due to the relatively small value of the gate leakage current and the high switching frequency of switch, some requirements for the amplifier, limit voltage is required [86]. Additionally, this method can be integrated into a gate driver chip as an extra protection layer or implemented separately on the power stage to prevent unexpected shutdown depending on the demand.…”

Section: Monitoring Gate Leakage Currentmentioning

confidence: 99%

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Enhance Reliability of Semiconductor Devices in Power Converters

Nguyen¹,

Kwak²

2020

Electronics

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As one of the most vulnerable components to temperature and temperature cycling conditions in power electronics converter systems in these application fields as wind power, electric vehicles, drive system, etc., power semiconductor devices draw great concern in terms of reliability. Owing to the wide utilization of power semiconductor devices in various power applications, especially insulated gate bipolar transistors (IGBTs), power semiconductor devices have been studied extensively regarding increasing reliability methods. This study comparatively reviews recent advances in the area of reliability research for power semiconductor devices, including condition monitoring (CM), active thermal control (ATC), and remaining useful lifetime (RUL) estimation techniques. Different from previous review studies, this technical review is carried out with the aim of providing a comprehensive overview of the correlation between various enhancing reliability techniques and discussing the corresponding merits and demerits by using 144 related up-to-date papers. The structure and failure mechanism of power semiconductor devices are first investigated. Different failure indicators and recent associated CM techniques are then compared. The ATC approaches following the type of converter systems are further summarized. Furthermore, RUL estimation techniques are surveyed. This paper concludes with summarized challenges for future research opportunities regarding reliability improvement.

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Real-Time Aging Detection of SiC MOSFETs

Cited by 57 publications

References 14 publications

A Review of Megahertz Current Sensors for Megahertz Power Converters

A Review of Megahertz Current Sensors for Megahertz Power Converters

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

Enhance Reliability of Semiconductor Devices in Power Converters

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