2022
DOI: 10.1109/tns.2022.3149160
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Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak During D-D Plasma Operation

Abstract: We conducted a real-time soft-error rate characterization of CMOS bulk 65 nm SRAMs subjected to fusion neutrons during deuterium-deuterium (D-D) plasma operation at WEST tokamak. The test equipment, installed in the experimental hall at several locations of the tokamak, was irradiated during machine shots by a flux of particles dominated by primary 2.45 MeV neutrons. Real-time neutron metrology, neutron spectrometry, complementary characterization with monoenergetic neutrons and Monte Carlo numerical simulatio… Show more

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Cited by 6 publications
(18 citation statements)
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“…µ and D are related to the operating voltage and current of the converter which are available according to the datasheet or actual test values. Substituting Equations ( 6) and (7) into Equation (5) gives that:…”
Section: Methods Of Taking the Resistancementioning
confidence: 99%
See 1 more Smart Citation
“…µ and D are related to the operating voltage and current of the converter which are available according to the datasheet or actual test values. Substituting Equations ( 6) and (7) into Equation (5) gives that:…”
Section: Methods Of Taking the Resistancementioning
confidence: 99%
“…However, CMOS devices are often subject to collisions with high-energy protons and heavy ions from the cosmic space environment. Therefore, CMOS devices are susceptible to Single Event Effect (SEE) [3][4][5][6]. In particular, Single Event Latch-up (SEL), a special SEE, can alter devices' currents and even cause devices to burn up in severe cases [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…-Electronics for high-energy accelerator detectors, with the main differences of (i) being mainly focused on rad-hard designs and (ii) requiring larger fluences, and/or heavy-ion SEE data, to convert to proton, neutron and pion (i.e., hadron) SEE rates; -Electronics for medical accelerators, mainly interested in neutrons up to a maximum energy of around 20 MeV for conventional radiotherapy, and ∼200 MeV for proton therapy; -Electronics for fusion applications [41], mainly interested in neutrons up to a maximum energy of 14 MeV; • explicitly supporting the involvement of project partners in technology transfer activities; • enhancing the visibility and awareness of facilities, and bridging the gap between different working cultures in academia and research labs (usually running the facilities) and industry (usual users); • diversifying the type of facilities available for radiation effects testing, and generating redundancy for beam types in high demand, hence mitigating the risk associated to the reduction or even full interruption of beam provision by a given facility; • acting as a source of stable revenue, which can at least partially satisfy the need of financial support for running the accelerators.…”
Section: Environment and Application Key See Testing Requirementsmentioning
confidence: 99%
“…In the neutron energy range of a tokamak plasma (thermal to fast neutrons up to 14.1 MeV for D-T plasma, or up to 2.45 MeV plus a small amount of 14.1 MeV for D-D plasma [2]), the effective cross-section 𝜎 𝑆𝐸𝐸 (𝐸) resulting from the various interaction mechanisms can be represented by the following two models:  The Weibull model representing the interaction of fast neutrons (FN) with nuclei (e.g. silicon), given by:…”
Section: A Ser Prediction Modelmentioning
confidence: 99%
“…( 1), already successfully used e.g. for the neutron environment of the LHC collider [7], was tested for the neutron environment of a Tokamak using the Real Time Single Event Rate (RTSER) test bench [2], [3], [4] developed by IM2NP (Institut Matériaux Microélectronique Nanosciences de Provence, Aix-Marseille University) and STMicroelectronics to study the mechanisms of production of SEEs by atmospheric neutrons on semiconductor memories. This RTSER test bench embeds 384 memory circuits (3,226 Gbit in total) manufactured by STMicroelectronics in CMOS 65 nm bulk technology with fabrication processes based on a BPSG (Borophosphosilicate Glass)-free BEOL that eliminates the major source of 10 B in the circuits and drastically reduces the possible interaction between 10 B and very low (thermal) energy neutrons.…”
Section: B Test Of the Ser Prediction Modelmentioning
confidence: 99%