2023
DOI: 10.3390/electronics12030550
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Study of Single Event Latch-Up Hardness for CMOS Devices with a Resistor in Front of DC-DC Converter

Abstract: Bulk silicon Complementary Metal Oxide Semiconductor (CMOS) devices have distinct single event latch-up (SEL) problems in aerospace. Therefore, it is essential that CMOS devices are designed with appropriate circuit-level methods. Traditional resistor hardness satisfies the current aerospace trend of low cost, high performance, and miniaturization. Therefore conventional resistor hardness is often applied in circuit-level designs due to the reduction of latch-up current. In circuits containing a DC-DC buck con… Show more

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Cited by 4 publications
(1 citation statement)
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“…The technical specifications of the PPLSEE-1 are shown in Table 1. PPLSEE-1 achieves precise positioning of SEFI-sensitive areas through controlling the movement of the Device Under Test (DUT) through a highprecision three-dimensional moving platform [20][21][22]. We have developed a testing system for investigating the SEFI of ADCs, which is illustrated in Figure 1.…”
Section: Methodsmentioning
confidence: 99%
“…The technical specifications of the PPLSEE-1 are shown in Table 1. PPLSEE-1 achieves precise positioning of SEFI-sensitive areas through controlling the movement of the Device Under Test (DUT) through a highprecision three-dimensional moving platform [20][21][22]. We have developed a testing system for investigating the SEFI of ADCs, which is illustrated in Figure 1.…”
Section: Methodsmentioning
confidence: 99%