Real time extraction of quantum dot size from RHEED intensity profiles

Rajapaksha, C.; Freundlich, A.

doi:10.1016/j.jcrysgro.2008.11.034

Cited by 5 publications

(8 citation statements)

References 17 publications

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“…RHEED is a standard non intrusive technique which is applied in situ to provide real time structure evolution during thin film growth in epitaxy. Our early analysis based on theoretical calculations using kinematic diffraction theory showed that quantum dot heights could be directly extracted from the periodicity of the predicted intensity fringes along the RHEED chevron tails [7,8]. In the present work we aim at exploiting these theories in determination of the size of epitaxialy grown InAs quantum dots on GaAs(001) during growth using a hybrid approach.…”

Section: Introductionmentioning

confidence: 99%

Real-time metrology of self assembled quantum dots by reflection high energy electron diffraction

Freundlich

Rajapaksha

2011

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII

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Based on atomistic analysis and kinematic diffraction theory, it has been previously predicted that quantum dot heights can be extracted from RHEED intensity profiles along the chevron tails (Feltrin A. and Freundlich A, J. Cryst. Growth 301-302, 38-41-2007). Here we report the existence of such periodic RHEED intensity fringes and demonstrate experimentally the possibility of monitoring real time the evolution of the average dot-size in the archetype InAs/GaAs system. The methodology when combined with RHEED information on the dot surface coverage and facet orientation is shown to provide a full metrology of self assembled quantum dots and could be valuable in assessing the QD growth kinetics and improving process reproducibility.

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Section: Introductionmentioning

confidence: 99%

Real-time metrology of self assembled quantum dots by reflection high energy electron diffraction

Freundlich

Rajapaksha

2011

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII

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“…Evolution of chevron angle along [1][2][3][4][5][6][7][8][9][10] azimuth is exhibited in figure 3 as the growth proceeds in terms of InAs monolayers deposited at 440C. Variation of RHEED intensity with temperature can be described in terms of QD density [3] and in reverse we can calculate dot density from intensity which is verified by AFM measurements.…”

Section: Onset Of Dot Formationmentioning

confidence: 80%

Real time during growth metrology and assessment of kinetics of epitaxial quantum dots by RHEED

Gunasekera

Freundlich

2012

2012 38th IEEE Photovoltaic Specialists Conference

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The ability to control their shape and size and reproducibility of epitaxial quantum dots is considered as key to the performance of many advanced photovoltaic devices. We demonstrated the possibility of extracting real time using reflection high energy electron diffraction (RHEED), the average dot-size, dot-facet orientations and dot densities. Here and within the framework of the synthesis of archetype InAs/GaAs quantum dot system we have undertaken a systematic study as a function of growth parameters of the evolution of dot sizes distributions and facet orientation and show the ability of the technique to monitor facetldot asymmetries.

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“…Evolution of chevron angle along [1][2][3][4][5][6][7][8][9][10] azimuth is exhibited here as the growth proceeds in terms of InAs monolayers deposited at 440 0 C.…”

Section: Application Of the Methodology To The Study Of Quantum Dot Fmentioning

confidence: 99%

“…The theoretical studies performed indicated that the smallest angle 45 0 corresponds to {2 5 11} family of facets and they more stable than {137} faceting. [1][2][3][4][5][6][7][8][9][10] (c) InAs monolayers deposited (ML) Figure 5. Chevron angle evolution as a function of InAs monolayer deposited at growth temperature 440 0 C and proposed structures based on mathematical calculation…”

Section: Application Of the Methodology To The Study Of Quantum Dot Fmentioning

confidence: 99%

“…In our previous studies, we have shown the possibility of using a theoretical modeling tool we have developed over the years in analyzing quantum dot characteristics in real time 4,6 . Here the RHEED patterns were calculated, considering the refraction of electrons at the interfaced and the effect of lattice vibrations on the electron scattering at high temperatures.…”

Section: Quantum Dot Facet Determination Using Rheedmentioning

confidence: 99%

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Unveiling structural properties of self-assembled quantum dots

2013

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A better understanding of structural properties and growth kinetics of Stranski-Krastanov (SK) quantum dots is necessary for applying dot potential in optical and electronic applications. In fact, We have recently demonstrated theoretically and experimentally, the ability of reflection high energy electron diffraction (RHEED) tool in quantitative analysis such as extracting average dot size, facet orientation and average dot density and real time monitoring of dot size during growth .As an extended study, in this work for the first time we present the experimental evidence on onset epitaxial quantum dot average shape evolution and theoretical predictions on QD facet orientations.

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Real time extraction of quantum dot size from RHEED intensity profiles

Cited by 5 publications

References 17 publications

Real-time metrology of self assembled quantum dots by reflection high energy electron diffraction

Real-time metrology of self assembled quantum dots by reflection high energy electron diffraction

Real time during growth metrology and assessment of kinetics of epitaxial quantum dots by RHEED

Unveiling structural properties of self-assembled quantum dots

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