Realization of 1.3μm InAs quantum dots with high-density, uniformity, and quality

Amano, Tsuyoshi; Sugaya, Takeyoshi; Yamauchi, Shohgo; Komori, Kazuhiro

doi:10.1016/j.jcrysgro.2006.08.004

Cited by 17 publications

(8 citation statements)

References 17 publications

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“…7. We have measured the temperature dependence of the PL intensity in the previous report [18]. The thermal activation energy (Ea) estimated from the temperature dependence of the PL intensity was consistent with the PL peak energy difference between the ground state and the wetting layer state.…”

Section: Qd Lasersupporting

confidence: 70%

Laser Characteristics of 1.3-$\mu$m Quantum Dots Laser With High-Density Quantum Dots

Amano

Aoki

Sugaya

et al. 2007

IEEE J. Select. Topics Quantum Electron.

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We have reported the effects of using an As 2 source and gradient composition-strain reducing laser (GC-SRL) to fabricate InAs quantum dot (QD) structures. The coalescence of the coherent QDs was reduced under the As 2 source. We have realized high density (8.0 × 10 10 cm −2 per sheet) measured by SEM and high uniformity (full-width at half-maximum: 23 meV measured by photoluminescence at room temperature) QDs using an As 2 source and the GC-SRL technique. Further, we have demonstrated ninestack QD lasers with high-density and high-uniformity QDs for the first time. We achieved a large modal gain of 54 cm −1 at a ground state emission of beyond 1.3-µm. A very low threshold current can be realized by a quantum effect for further equalization of QDs. We believe that the method of fabricating this QD laser with high density, high uniformity, and high modal gain will qualify as a novel technique.Index Terms-1.3-µm quantum dot (QD) laser, As 2 source, gradient composition-strain reducing laser (GC-SRL), high-density QD, high modal gain.

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Section: Qd Lasersupporting

confidence: 70%

Laser Characteristics of 1.3-$\mu$m Quantum Dots Laser With High-Density Quantum Dots

Amano

Aoki

Sugaya

et al. 2007

IEEE J. Select. Topics Quantum Electron.

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“…Even when compared to large-area self-assembled QD ensembles grown using methods or structures designed to enhance uniformity and minimize luminescence linewidth, the EL from the NSL-fabricated QDs presented here compares favorably, in terms of emission linewidth. [28][29][30] Only when compared to limited-area patterned QDs formed with advanced lithographic techniques do we see our NSL-patterned QDs exhibiting broader emission linewidths. 17 Though PL and EL emission from the samples is weak, there are multiple avenues available for improving emission efficiency.…”

mentioning

confidence: 80%

Electroluminescence from quantum dots fabricated with nanosphere lithography

Lan

Law

Wasserman

2012

Applied Physics Letters

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“…Many researchers have proposed various methods to prepare QDs with high and uniform density [7], [8]. Highly uniform selfassembled QDs with a full width at half maximum (FWHM) narrower than 15 meV have been prepared through numerous improvements in synthesis techniques, but QD density remains poor [9].…”

Section: Highly Dense and Uniform Qdsmentioning

confidence: 99%

“…Self-organized InAs/GaAs QD structures were grown with a high density on a GaAs(001) substrate using MBE with an As 2 source generated by a valved cracker cell [9], [16]. Coauthor Sugaya has reported that As 2 and As 4 sources have different migration lengths in cases of quantum wires and QDs.…”

Section: Optical Properties Of High-density and Highuniformity Qdsmentioning

confidence: 99%

Nanophotonic Devices Based on Semiconductor Quantum Nanostructures

Komori

Sugaya

Amano

et al. 2016

IEICE Trans. Electron.

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SUMMARYIn this study, our recent research activities on nanophotonic devices with semiconductor quantum nanostructures are reviewed. We have developed a technique for nanofabricating of high-quality and high-density semiconductor quantum dots (QDs). On the basis of this core technology, we have studied next-generation nanophotonic devices fabricated using high-quality QDs, including (1) a high-performance QD laser for long-wavelength optical communications, (2) high-efficiency compound-type solar cell structures, and (3) single-QD devices for future applications related to quantum information. These devices are expected to be used in high-speed optical communication systems, high-performance renewable energy systems, and future high-security quantum computation and communication systems.

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Realization of 1.3μm InAs quantum dots with high-density, uniformity, and quality

Cited by 17 publications

References 17 publications

Laser Characteristics of 1.3-$\mu$m Quantum Dots Laser With High-Density Quantum Dots

Laser Characteristics of 1.3-$\mu$m Quantum Dots Laser With High-Density Quantum Dots

Electroluminescence from quantum dots fabricated with nanosphere lithography

Nanophotonic Devices Based on Semiconductor Quantum Nanostructures

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