Reappraisal of the unconditional stability criteria for active 2-port networks in terms of S parameters

Woods, D.

doi:10.1109/tcs.1976.1084179

Cited by 103 publications

(63 citation statements)

References 7 publications

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“…The matrix [Z 3 ] is transformed into scattering matrix [S 3 ], which can be reduced to a 2×2 one when considering a particular termination sb  at any of the three sidebands. This way it is possible to obtain 3 pairs of large-signal stability factors, which agree with the large-signal equivalents of the  factors in [8]. It is easily shown [2] that the most critical stability situation corresponds to 1…”

Section: Mismatch-induced Instability Of Pasmentioning

confidence: 59%

Advances in the simulation of autonomous microwave circuits

Suárez

Sancho

Pontón

et al. 2016

2016 IEEE MTT-S Latin America Microwave Conference (LAMC)

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-Advances in the simulation of nonlinear microwave circuits of autonomous nature are presented, covering three relevant aspects: potential instability of power amplifiers under output mismatch effects, design of dual-band frequency dividers, with interest in multi-band communication systems, and oscillator phase-noise analysis. The instability under mismatch effects is predicted through the calculation of a 3-port scattering matrix, at three relevant sideband frequencies, which is obtained by linearizing the circuit about the large-signal steady-state solution. The dual-band divider is based on a parallel configuration, using two types of inductor-varactor cells, as well as a simultaneous design/optimization of two identical circuits, each operating at one of the two frequency bands. Finally, a new phase-noise analysis method able to predict the near-carrier spectral density in the presence of near-critical poles is described.

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Section: Mismatch-induced Instability Of Pasmentioning

confidence: 59%

Advances in the simulation of autonomous microwave circuits

Suárez

Sancho

Pontón

et al. 2016

2016 IEEE MTT-S Latin America Microwave Conference (LAMC)

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“…If , the above auxiliary conditions are all equivalent, as was proven in [3] for what concerns the conditions (2), (4), and (6), and in [1] for what concerns (3) and (5). Since (3) and (4) are relative to stability at port 1, while (5) and (6) refer to stability at port 2, this also leads to the well-known result that stability at one port implies global two-port stability.…”

Section: Introductionmentioning

confidence: 84%

New simple proofs of the two-port stability criterium in terms of the single stability parameter μ/sub 1/ (μ/sub 2/)

Bianco

Ghione

Pirola

2001

IEEE Trans. Microwave Theory Techn.

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The classical scattering-parameter stability criterium for a linear two-port makes use of two conditions involving the Rollet parameter plus one additional parameter. A new stability criterium was developed by Edwards and Sinksky on the basis of a condition on a single parameter, i.e., 1 or 2 . This paper presents a new, simpler, and more straightforward set of proofs of the single-parameter stability criterium for a linear two-port. The first proof is algebraic and shows the equivalence of the conditions 1, 1 with the condition 1 ( = 1 2). The second proof, which is geometrical, relies only on the classical stability circle concepts in an improved way with respect to the treatment by Edwards and Sinksky.

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“…Therefore the stability is quantified through the factor 'μ'. A convenient formula for stability is given in [18] by…”

Section: Pa Fabrication Using Ldmosmentioning

confidence: 99%

A TCAD approach for non-linear evaluation of microwave power transistor and its experimental verification by LDMOS

et al. 2010

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A simulation technique is developed in TCAD to study the non-linear behavior of RF power transistor. The technique is based on semiconductor transport equations to swot up the overall non-linearity's occurring in RF power transistor. Computational load-pull simulation technique (CLP) developed in our group, is further extended to study the non-linear effects inside the transistor structure by conventional two-tone RF signals, and initial simulations were done in time domain. The technique is helpful to detect, understand the phenomena and its mechanism which can be resolved and improve the transistor performance. By this technique, the third order intermodulation distortion (IMD 3 ) was observed at different power levels. The technique was successfully implemented on a laterally-diffused field effect transistor (LDMOS). The value of IMD 3 obtained is −22 dBc at 1-dB compression point (P 1 dB ) while at 10 dB back off the value increases to −36 dBc. Simulation results were experimentally verified by fabricating a power amplifier with the similar LDMOS transistor.

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Reappraisal of the unconditional stability criteria for active 2-port networks in terms of S parameters

Cited by 103 publications

References 7 publications

Advances in the simulation of autonomous microwave circuits

Advances in the simulation of autonomous microwave circuits

New simple proofs of the two-port stability criterium in terms of the single stability parameter μ/sub 1/ (μ/sub 2/)

A TCAD approach for non-linear evaluation of microwave power transistor and its experimental verification by LDMOS

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