Recent advances in all-epitaxial growth and properties of orientation-patterned gallium arsenide (OP-GaAs)

Schunemann, Peter G.; Pomeranz, Leonard A.; Young, York E.; Mohnkern, L. M.; Vera, A.

doi:10.1364/cleo.2009.cwj5

Cited by 8 publications

(11 citation statements)

References 2 publications

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“…is simple notation for the complex conjugate of the previous terms 9 . Maximization of the dipole matrix element while simultaneously minimizing energy dispersive effects is paramount to optimizing nonlinear susceptibility 1,3,4,[6][7][9][10][11] given by the following:…”

Section: Shg In Nonlinear Materialsmentioning

confidence: 99%

“…For orientation-patterned substrates, the coherence length of the second harmonic is extended due to the periodic inversion of the crystal planes. Conversion efficiencies of greater than 30% have been reported 6 with a nonlinear coefficient of ~94pm/V 6,7 . Utilization of orientation-patterned oriented substrates is still in their infancy, due to the extremely rare manner in which they are produced 7,12 .…”

Section: Shg In Nonlinear Materialsmentioning

confidence: 99%

“…Conversion efficiencies of greater than 30% have been reported 6 with a nonlinear coefficient of ~94pm/V 6,7 . Utilization of orientation-patterned oriented substrates is still in their infancy, due to the extremely rare manner in which they are produced 7,12 . Thick OP-GaAs layers have been grown by hydride vapor epitaxy, however due to the rarity of this technique, orientation-patterned substrates are more expensive 12 , which inhibits their widespread use.…”

Section: Shg In Nonlinear Materialsmentioning

confidence: 99%

“…Misoriented substrates, in which the crystal planes are periodically inverted, offer a convenient method for quasi-phase-matching in frequency mixed devices 5,6,7 .…”

Section: Introductionmentioning

confidence: 99%

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Spectroscopy studies of strain-compensated mid-infrared QCL active regions on misoriented substrates

et al. 2013

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In this work, we perform spectroscopic studies of AlGaAs/InGaAs quantum cascade laser structures that demonstrate frequency mixing using strain-compensated active regions. Using a three-quantum well design based on diagonal transitions, we incorporate strain in the active region using single and double well configurations on various surface planes (100) and (111). We observe the influence of piezoelectric properties in molecular beam epitaxy grown structures, where the addition of indium in the GaAs matrix increases the band bending in between injector regions and demonstrates a strong dependence on process conditions that include sample preparation, deposition rates, mole fraction, and enhanced surface diffusion lengths. We produced mid-infrared structures under identical deposition conditions that differentiate the role of indium(strain) in intracavity frequency mixing and show evidence that this design can potentially be implemented using other material systems.

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Section: Shg In Nonlinear Materialsmentioning

confidence: 99%

Section: Shg In Nonlinear Materialsmentioning

confidence: 99%

Section: Shg In Nonlinear Materialsmentioning

confidence: 99%

“…Misoriented substrates, in which the crystal planes are periodically inverted, offer a convenient method for quasi-phase-matching in frequency mixed devices 5,6,7 .…”

Section: Introductionmentioning

confidence: 99%

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Spectroscopy studies of strain-compensated mid-infrared QCL active regions on misoriented substrates

et al. 2013

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“…1 shows a recently measured tuning curve, demonstrating that a tunable Cr:ZnSe laser pumping an orientation-patterned GaAs (OP-GaAs) OPO can provide continuous tuning from 3 to 14 m using a single laser/OPO source [58]. In addition to continued improvement in QPM device growth processes and material quality [59], [60], QPM GaAs was shown to exhibit polarization-diverse frequency mixing [61] and has been demonstrated in a 20-50-kHz PRF OPO pumped by a Ho:YAG laser [62]. Demonstrated output was 2.85 W with 46% conversion efficiency.…”

Section: Nonlinear Opticsmentioning

confidence: 99%

Mid-Infrared Lasers

Carrig

2010

IEEE Photonics J.

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Analytical and numerical modeling of optical second harmonic generation in anisotropic crystals using ♯SHAARP package

Wang

et al. 2022

npj Comput Mater

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Electric-dipole optical second harmonic generation (SHG) is a second-order nonlinear process that is widely used as a sensitive probe to detect broken inversion symmetry and local polar order. Analytical modeling of the SHG polarimetry of a nonlinear optical material is essential to extract its point group symmetry and the absolute nonlinear susceptibilities. Current literature on SHG analysis involves numerous approximations and a wide range of (in)accuracies. We have developed an open-source package called the Second Harmonic Analysis of Anisotropic Rotational Polarimetry (♯SHAARP.si) which derives analytical and numerical solutions of reflection SHG polarimetry from a single interface (.si) for bulk homogeneous crystals with arbitrary symmetry group, arbitrary crystal orientation, complex and anisotropic linear dielectric tensor with frequency dispersion, a general SHG tensor and arbitrary light polarization. ♯SHAARP.si enables accurate modeling of polarimetry measurements in reflection geometry from highly absorbing crystals or wedge-shaped transparent crystals. The package is extendable to multiple interfaces.

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Recent advances in all-epitaxial growth and properties of orientation-patterned gallium arsenide (OP-GaAs)

Cited by 8 publications

References 2 publications

Spectroscopy studies of strain-compensated mid-infrared QCL active regions on misoriented substrates

Spectroscopy studies of strain-compensated mid-infrared QCL active regions on misoriented substrates

Mid-Infrared Lasers

Analytical and numerical modeling of optical second harmonic generation in anisotropic crystals using ♯SHAARP package

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