Recent advances in dry etching processes for InP-based materials

Niggebrugge, U.

doi:10.1109/iciprm.1991.147346

Cited by 1 publication

(1 citation statement)

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“…Most III-V compound semiconductors can be RIE etched using chlorine or bromine process gases [ 15 , 101 ] as reported in a number of papers [ 102 , 103 , 104 , 105 , 106 , 107 , 108 , 109 , 110 , 111 ]. However, most of these materials pose several significant challenges for RIE etching.…”

Section: Deep High-aspect-ratio Rie Of Compound Semiconductorsmentioning

confidence: 99%

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Huff

2021

Micromachines

141

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This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a number of reasons, primarily because it allows the resultant device dimensions to be more accurately and precisely controlled. This directly leads to a reduction in development costs as well as improved production yields. Nevertheless, traditional RIE was limited to moderate etch depths (e.g., a few microns). More recent developments in newer RIE methods and equipment have enabled considerably deeper etches and higher aspect ratios compared to traditional RIE methods and have revolutionized bulk micromachining technologies. The most widely known of these technologies is called the inductively-coupled plasma (ICP) deep reactive ion etching (DRIE) and this has become a mainstay for development and production of silicon-based micro- and nano-machined devices. This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials.

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