Recent Advances in GaAsP/Si Top Cell Enabling 27% Tandem Efficiency

High-efficiency solar cells with low manufacturing costs have been recently accomplished utilizing different technologies. III-V-based tandem solar cells have exhibited performance enhancement with a recent efficiency of greater than 39% under AM1.5G and 47% under concentration. Integration of such III-V materials on a relatively cheap Silicon (Si) substrate is a potential pathway to fabricate high-efficient low-cost tandem solar cells. Besides, perovskite solar cells, as third-generation thin film photovoltaics (PV), have been meteorically developed at a reasonable cost. At present, there are still questions for cost reduction of perovskite materials and solar cell modules because of their limited commercialization. In this review, stacking Si solar cells with III-V material to form Si-based III-V tandem solar cells is presented with different integration technological routes. Also, perovskite/Si tandem solar cells have been reviewed alongside their main engineering challenges introduced through the fabrication of perovskite-based tandem solar cells. Finally, a comparison between III-V tandem solar cells, Si-based III-V tandem solar cells, and perovskite-based tandem solar cells is introduced so that the best technology for a specific application could be determined. The review provides a comprehensive study of two different technologies (III/V and Perovskite) to demonstrate the most valuable cost reduction availability for each.

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A Comprehensive Review of Tandem Solar Cells Integrated on Silicon Substrate: III/V vs Perovskite

Saif

Zekry

Abouelatta

et al. 2023

Silicon

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GaAs_0.95P_0.05 single junction solar cell with InP QW in p-i-n region for sub-bandgap photon absorption

Verma

Routray

Sahoo³

et al. 2023

Phys. Scr.

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To improve the the absorption of the incoming light spectrum in the cell, the bandgap modulation is performed in the cell. such a cell is designed here, with the help of quantum well region of InP material and GaInP barrier region. The bandgap engineered GaAsP solar cell having the bandgap of 1.48eV is utilized along with the InP quantum well material with bandgap energy of 1.35eV. The quantum well absorbs the lower bandgap photon energy, which improves the photo carriers. A type-A bandgap structure is formed in the quantum well region, which results in enhanced utilization of lower bandgap photon energy. The Analysis show the significant absorption of the incoming light spectrum, which reflects in the improvement of the current density. The trade-off between the short circuit current and open circuit voltage, which happens due to the bandgap modulation, leads to the 20% drop in the open circuit voltage. But, due to larger improvement of 31.06% in the short circuit current leads to the improvement of 4.75% in overall efficiency of the cell. The quantum efficiency of the cell is well above 90%. The bandgap modulated quantum well solar cell achieves 25.76% efficiency for the formation of the p-i-n region. AM1.5G environment under 1-Sun spectrum is used to illuminate the designed solar cell.

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Recent Advances in GaAsP/Si Top Cell Enabling 27% Tandem Efficiency

Cited by 2 publications

References 6 publications

A Comprehensive Review of Tandem Solar Cells Integrated on Silicon Substrate: III/V vs Perovskite

A Comprehensive Review of Tandem Solar Cells Integrated on Silicon Substrate: III/V vs Perovskite

GaAs_0.95P_0.05 single junction solar cell with InP QW in p-i-n region for sub-bandgap photon absorption

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Recent Advances in GaAsP/Si Top Cell Enabling 27% Tandem Efficiency

Cited by 2 publications

References 6 publications

A Comprehensive Review of Tandem Solar Cells Integrated on Silicon Substrate: III/V vs Perovskite

A Comprehensive Review of Tandem Solar Cells Integrated on Silicon Substrate: III/V vs Perovskite

GaAs0.95P0.05 single junction solar cell with InP QW in p-i-n region for sub-bandgap photon absorption

Contact Info

Product

Resources

About

GaAs_0.95P_0.05 single junction solar cell with InP QW in p-i-n region for sub-bandgap photon absorption