Recent advances of In2O3-based thin-film transistors: A review

Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

“…The measurement assesses the sensitivity of the thin-film transistor (TFT) to variations in the gate voltage (V g ). Here, we have measured the SS value by taking the inverse of the slope fitted linearly from the log-linear I ds -V gs characteristic curve [65]. The theoretical limit for the SS value of a conventional device at room temperature (300 K) is at 0.06 V/decade [66,67].…”

Synthesis and Characterization of a Semiconductor Diodic Bilayer PbS/CdS Made by the Chemical Bath Deposition Technique

“…Semiconductors are also used as potentiometers in the automotive sector, as a portable semiconductor refrigeration device, as well as in thin-film transistors (TFTs), which are of high interest for further investigation and application due to their ease of fabrication . Flexible oxide TFTs are used as memristive devices, p-type tellurium (Te) TFTs, indium oxide (In 2 O 3 )-based TFTs, and TFTs based in metal oxide semiconductors in emerging applications such as flexible–stretchable devices; biosensors; zinc tin oxide, indium gallium zinc oxide, indium tin zin oxide, nitrogen-doped indium tin oxide, and indium tin oxide (ITO) TFTs as promising biosensing devices; and so on as next-generation TFTs, among others. − Solar energy is a freely available renewable energy source. Moreover, it is eco-friendly and can provide energy at a low cost.…”

Indium-zinc-oxide thin films produced by low-cost chemical solution deposition: Tuning the microstructure, optical and electrical properties with the processing conditions

“…Transparent electronics is a rapidly developing area of science and technology focusing on the manufacture of invisible electronic circuits and devices, the functions of which are based on a transparent, conductive material (TCM). Next-generation device technology requires TCM layers on transparent substrates such as glass with thicknesses up to a few hundred nanometers and a high optical transmittance (>90%), while the electrical sheet resistance (R s ) requirements are application-specific and range from 1 to 500 Ω/sq [ [1] , [2] , [3] ]. The most commonly used composition for transparent conductive materials (TCM) is indium tin oxide (ITO), which is characterized by a thickness of less than 1 μm, a sheet resistance of about 10 Ω/sq, and an optical transmittance of more than 80%.…”

“…Amorphous compositions have an electrical conductivity of ∼1 mΩcm and an optically transparency over 80%, a wide bandgap of ∼3.6 eV and a high etching rate, which is required for the micropatterning process. These properties ensure easy device integration at low processing temperatures and the production of devices with uniform properties [ 2 , 3 , [6] , [7] , [8] , [9] , [10] , [11] ].…”