Recent development of gallium oxide thin film on GaN

Oon, Hooi Shy; Cheong, Kuan Yew

doi:10.1016/j.mssp.2013.01.027

Cited by 38 publications

(13 citation statements)

References 99 publications

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“…Gallium (Ga), one of the important raw materials used in contemporary semiconductor industry, was discovered in 1875 [1], and has been significantly utilized in the industry since the 1940s. Ga and its compounds are extensively used in advanced electronic devices [2,3,4], integrated circuits [5,6,7], and thin-film solar cells [8,9] because these compounds can provide the benefits of low energy consumption and high computation speeds.…”

Section: Introductionmentioning

confidence: 99%

A Facile and Low-Cost Method to Produce Ultrapure 99.99999% Gallium

Pan

Zhang

et al. 2018

Materials

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As one of the critical raw materials, very pure gallium is important for the semiconductor and photoelectric industry. Unfortunately, refining gallium to obtain a purity that exceeds 99.99999% is very difficult. In this paper, a new, facile and efficient continuous partial recrystallization method to prepare gallium of high purity is investigated. Impurity concentrations, segregation coefficients, and the purification effect were measured. The results indicated that the contaminating elements accumulated in the liquid phase along the crystal direction. The order of the removal ratio was Cu > Mg > Pb > Cr > Zn > Fe. This corresponded to the order of the experimentally obtained segregation coefficients for each impurity: Cu < Mg < Pb < Cr < Zn < Fe. The segregation coefficient of the impurities depended strongly on the crystallization rate. All observed impurity concentrations were substantially reduced, and the purity of the gallium obtained after our refinement exceeded 99.99999%.

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Section: Introductionmentioning

confidence: 99%

A Facile and Low-Cost Method to Produce Ultrapure 99.99999% Gallium

Pan

Zhang

et al. 2018

Materials

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“…However, a far better solution consists in obtaining oxides of surface layers as a result of controllable oxidation. The gallium nitride GaN oxidation has been long described in the literature [4,5]. The oxidation of the second nitride, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…The published papers on the thermal oxidation of semiconductor compounds AIIIN describe largely dry oxidation, while the wet oxidation is described comparatively rarely [4,5]. There also exists a third method of thermal oxidation, namely mixed oxidation that takes place when a mixture of nitrogen, oxygen and water vapour is fed to the Abstract This paper presents an analysis of thermal oxidation kinetics for Aluminium nitride (AlN) epitaxy layers using three methods: dry, wet and mixed.…”

Section: Introductionmentioning

confidence: 99%

Oxidation rates of aluminium nitride thin films: effect of composition of the atmosphere

Korbutowicz

Zakrzewski

Rac-Rumijowska

et al. 2017

J Mater Sci: Mater Electron

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“…In this work, double-channel epitaxial layers of lattice-matched Al 0.83 In 0.17 N/GaN/Al 0.18 Ga 0.82 N/GaN were grown on Si substrates using a metalorganic chemical deposition (MOCVD, AIXTRON Group, Herzogenrath, Germany) system. Although several gate oxide layers were used in GaN-based MOSHEMTs [15][16][17][18][19][20], gallium oxide (Ga 2 O 3 )-based materials have become promising gate oxide layers due to their superior properties of high breakdown voltage, high radiation resistance, high thermal and chemical stability, high Baliga's figure-of-merit, and better interface properties between Ga 2 O 3 film and GaN-based semiconductors [21][22][23]. Furthermore, because high-quality and high-insulating amorphous Ga 2 O 3 films could be deposited using a vapor cooling condensation system [24,25] and were successfully used in GaN-based MOSHEMTs previously [25,26], the system was used to deposit a 30-nm-thick Ga 2 O 3 film as a gate oxide layer in this work.…”

Section: Introductionmentioning

confidence: 99%

Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

Lee

Chyi

et al. 2021

Materials

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In this work, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electron density of 1.11 × 1013 cm−2 and an electron mobility of 1770 cm2/V-s were obtained. Using a vapor cooling condensation system to deposit high insulating 30-nm-thick Ga2O3 film as a gate oxide layer, double-hump transconductance behaviors with associated double-hump maximum extrinsic transconductances (gmmax) of 89.8 and 100.1 mS/mm were obtained in the double-channel planar MOSHEMTs. However, the double-channel devices with multiple-mesa-fin-channel array with a gmmax of 148.9 mS/mm exhibited single-hump transconductance behaviors owing to the better gate control capability. Moreover, the extrinsic unit gain cutoff frequency and maximum oscillation frequency of the devices with planar channel and multiple-mesa-fin-channel array were 5.7 GHz and 10.5 GHz, and 6.5 GHz and 12.6 GHz, respectively. Hooge’s coefficients of 7.50 × 10−5 and 6.25 × 10−6 were obtained for the devices with planar channel and multiple-mesa-fin-channel array operating at a frequency of 10 Hz, drain–source voltage of 1 V, and gate–source voltage of 5 V, respectively.

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Recent development of gallium oxide thin film on GaN

Cited by 38 publications

References 99 publications

A Facile and Low-Cost Method to Produce Ultrapure 99.99999% Gallium

A Facile and Low-Cost Method to Produce Ultrapure 99.99999% Gallium

Oxidation rates of aluminium nitride thin films: effect of composition of the atmosphere

Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

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