Recent developments in magnetic tunnel junction MRAM

Tehrani, S.; Engel, Brad N.; Slaughter, J. M.; Chen, E.; DeHerrera, M.; Durlam, M.; Naji, P.; Whig, R.; Janesky, J.; Calder, J.

doi:10.1109/20.908581

Cited by 284 publications

(109 citation statements)

References 13 publications

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“…While many existing spintronic applications (Hartman, 2000;Hirota et al, 2002) are based on the GMR effects, the discovery of large room-temperature TMR (Miyazaki and Tezuka, 1995;Moodera et al, 1995) has renewed interest in the study of magnetic tunnel junctions, which are now the basis for the several magnetic random-access memory prototypes 16 (Parkin, Roche, et al, 1999;Tehrani et al, 2000). Future generations of magnetic read heads are expected to use MTJ's instead of CIP giant magnetoresonance.…”

Section: Spin-polarized Transport and Magnetoresistive Effectsmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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Section: Spin-polarized Transport and Magnetoresistive Effectsmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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“…In the first experimental demonstration of precessional switching intense magnetic field pulses of only a few ps duration were used to reverse large domains in Co and Co/Pt thin films (6,7). Numerical simulations pointed out that precessional switching should also be applicable for small magnetic cells (8,9) as used in magnetic random access memories (M-RAM) (12) and with technically available pulse durations longer than 100 ps. The first observations of such processes, in the limit of high pulse amplitudes and short pulse duration were recently reported (13).…”

Section: Articlementioning

confidence: 99%

Phase Coherent Precessional Magnetization Reversal in Microscopic Spin Valve Elements

et al. 2003

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We study the precessional switching of the magnetization in microscopic spin valve cells induced by ultra short in-plane hard axis magnetic field pulses. Stable and highly efficient switching is monitored following pulses as short as 140 ps with energies down to 15 pJ.Multiple application of identical pulses reversibly toggles the cell's magnetization between the two easy directions. Variations of pulse duration and amplitude reveal alternating regimes of switching and non-switching corresponding to transitions from inphase to out-of-phase excitations of the magnetic precession by the field pulse. In the low field limit damping becomes predominant and a relaxational reversal is found allowing switching by hard axis fields below the in-plane anisotropy field threshold.

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“…2 Other oxidation strategies, such as ultraviolet-light-assisted oxidation, [15][16] also achieve high-TMR values. MTJs with TMR above about 40% at room temperature and adjustable resistance-area products RϫA from 10 6 …”

Section: Introductionmentioning

confidence: 99%

Quantitative x-ray photoelectron spectroscopy study of Al/AlOx bilayers

Batlle

Hattink

Labarta

et al. 2002

Journal of Applied Physics

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An x-ray photoelectron spectroscopy ͑XPS͒ analysis of Nb/Al wedge bilayers, oxidized by both plasma and natural oxidation, is reported. The main goal is to show that the oxidation state-i.e., O:͑oxidize͒Al ratio-, structure and thickness of the surface oxide layer, as well as the thickness of the metallic Al leftover, as functions of the oxidation procedure, can be quantitatively evaluated from the XPS spectra. This is relevant to the detailed characterization of the insulating barriers in ͑magnetic͒ tunnel junctions.

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Recent developments in magnetic tunnel junction MRAM

Cited by 284 publications

References 13 publications

Spintronics: Fundamentals and applications

Spintronics: Fundamentals and applications

Phase Coherent Precessional Magnetization Reversal in Microscopic Spin Valve Elements

Quantitative x-ray photoelectron spectroscopy study of Al/AlOx bilayers

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