Recent implementations of Class-E power amplifiers

Rajaie, Ahmed; Khorshid, Ahmed; Darwish, Ali

doi:10.1109/jec-ecc.2012.6186951

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Cited by 4 publications

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“…The transistors that act as a switch in the PA can be either electrical or mechanical [3]. The silicon CMOS transistors have been widely used as switches for the last decade [4].…”

Section: Introductionmentioning

confidence: 99%

A wideband class E PA with more than 40% PAE and over 800 MHz bandwidth

Gunturi

Kotecki

2014

2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS)

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A Power Amplifier (PA) for wireless applications operating between 2.6 GHz and 3.4 GHz with power added efficiency (PAE) of more than 40% is presented in this paper. By varying the width of the PA transistor, the performance of the PA in terms of PAE and stability is studied. The PAE is more than 40% for the bandwidth of 800 MHz. The input matching circuit is implemented using on-chip transmission lines and the input reflection coefficient is less than -8dB over the bandwidth. The output power and PAE are 15.5dBm and 52% respectively at 2.7 GHz. The power amplifier is implemented in 180nm CMOS technology and the total area is approximately equal to 1mm 2 . The circuit includes electrostatic discharge (ESD) protection.

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“…The transistors that act as a switch in the PA can be either electrical or mechanical [3]. The silicon CMOS transistors have been widely used as switches for the last decade [4].…”

Section: Introductionmentioning

confidence: 99%