Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

Keller, S.; Li, Haoran; Laurent, Matthew A.; Hu, Yan-Ling; Pfaff, Nathan; Lu, Jing; Brown, David F.; Fichtenbaum, N.; Speck, James S.; DenBaars, Steven P.; Mishra, Umesh K.

doi:10.1088/0268-1242/29/11/113001

Cited by 187 publications

(149 citation statements)

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“…More recently nonpolar in the a-and m-direction has been investigated where the surface is formed by the m-({1-100}) and a-plane ({11-20}), respectively (27). III-nitride semiconductors are typically grown by several different methods and on nonlatticed matched substrates such as sapphire, SiC, or Si (28). A large lattice mismatch between non-native substrates and III-nitride layers leads to high dislocation densities, strain, and reduced crystal quality of the layers.…”

Section: Iii-nitride Materials' Properties With Importance To Biosensorsmentioning

confidence: 99%

Electronic Biosensors Based on III-Nitride Semiconductors

Kirste

Rohrbaugh²,

Bryan³

et al. 2015

Annual Rev. Anal. Chem.

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We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

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Section: Iii-nitride Materials' Properties With Importance To Biosensorsmentioning

confidence: 99%

Electronic Biosensors Based on III-Nitride Semiconductors

Kirste

Rohrbaugh²,

Bryan³

et al. 2015

Annual Rev. Anal. Chem.

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“…This helps reduce the gate–channel distance in HEMTs, and the back barrier provided by the AlGaN layer makes the carrier confinement stronger in comparison with Ga‐polar GaN HEMTs. Successful growth and device application of N‐polar GaN materials have been reported from different groups. In particular, the superior power performance of N‐polar GaN HEMTs compared with their Ga‐polar counterparts has been demonstrated in high frequencies over 90 GHz .…”

Section: Introductionmentioning

confidence: 99%

Effective Schottky Barrier Height Model for N‐Polar and Ga‐Polar GaN by Polarization‐Induced Surface Charges with Finite Thickness

Suemitsu

Makabe

2020

Physica Status Solidi (b)

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The nitrogen‐polar GaN material system is a promising candidate for high‐frequency applications, such as those in the millimeter‐wave range. Schottky barrier height is one of fundamental parameters necessary for device applications of N‐polar GaN. Herein, vertical Schottky diodes for both N‐polar and Ga‐polar GaN are prepared, and it is found through experiments that the barrier height of N‐polar GaN is smaller than that of Ga‐polar GaN by 0.21 V. This difference in the barrier height stems from the polarization‐induced surface charge layer of a few angstroms thickness under the surface. Numerical calculation of band profiles suggests that a significant band bending caused by the large amount of polarization charges pushes the conduction band energy downward (upward) in the N‐polar (Ga‐polar) surface depending on the sign of the polarization charges, which results in two different effective Schottky barrier heights. This difference is explained by assuming the polarization‐charge layer thickness of about 5 Å. A simple analytical model to estimate the difference in barrier heights between the two polarities is also proposed.

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“…The most intense investigations of crystal growth focus on in its Ga-polar (0001) orientation because it is easier to obtain stable process with smooth surfaces of this polarization. However growth at N-polar GaN(0001) surface focuses recently more and more attention because of wide variety of applications as solar cells, sensors, high electron mobility transistors and light emitting diodes [5][6][7]. There are reasons to believe that crystal grow in this polarization leads to structures of better quality.…”

Section: Introductionmentioning

confidence: 99%