Recent Progress in Short‐ to Long‐Wave Infrared Photodetection Using 2D Materials and Heterostructures

Abstract

The extraordinary electronic, optical, and mechanical characteristics of 2D materials make them promising candidates for optoelectronics, specifically in infrared (IR) detectors owing to their flexible composition and tunable optoelectronic properties. This review presents the recent progress in IR detectors composed of 2D materials and their hybrid structures, including graphene, black phosphorous, transition metal dichalcogenides, halide perovskite as well as other new layered materials and their heterostructures. The focus is on the short‐wave, mid‐wave, and long‐wave infrared regimes, which pose a grand challenge for rational materials and device designs. The dependence of the device performance on the optical and electronic properties of 2D materials is extensively discussed, aiming to present the general strategies for designing optoelectronic devices with optimal performance. Furthermore, the recent results on 2D material‐based heterostructures are presented with an emphasis on the relationship between band alignment, charge transfer, and IR photodetection. Finally, a summary is given as well as the discussion of existing challenges and future directions.

Self-Powered Filterless On-Chip Full-Stokes Polarimeter

“…3 Two-dimensional (2D) layered materials have been extensively investigated for their atomically thin thickness, layered structure and unique optical and optoelectronic properties. [15][16][17][18] Particularly, the layered nature of 2D materials allows them to form various van der Waals junctions with functionalities according to demanding, and easily integrate with silicon-based chips without requiring the lattice mismatch. 15,18,19 2D materials with in-plane anisotropy such as black phosphorus and ReS 2 have been utilized to detect the linearly polarized light with decent performance.…”

“…[15][16][17][18] Particularly, the layered nature of 2D materials allows them to form various van der Waals junctions with functionalities according to demanding, and easily integrate with silicon-based chips without requiring the lattice mismatch. 15,18,19 2D materials with in-plane anisotropy such as black phosphorus and ReS 2 have been utilized to detect the linearly polarized light with decent performance. 2,20,21 Nevertheless, up to date, sensing all polarization states of light based on 2D materials remains elusive.…”

Manipulating the Light‐Matter Interaction of PtS/MoS2 p–n Junctions for High Performance Broadband Photodetection

“…[ 1–4 ] The p–n junction promotes the separation of photogenerated electrons and holes due to the formation of a built‐in electric field, which facilitates the construction of high‐performance infrared detection, and brings new ideas for 2D material‐based infrared detection from another freedom. [ 5–9 ]…”

2D Material‐Based Photodetectors for Infrared Imaging

“…[ 2 ] The detection of IR can be used for molecular chemistry, military medicine, spectral analysis, biomedical imaging, artificial retina, environmental monitoring, IR communication, and optical interconnection application, etc. [ 3 ] It is urgent to develop high‐performance and high‐integrated IR photoelectric detection and imaging devices, in which the materials play a key role. The research on human eyes shows that two kinds of information are formed in the process of seeing the visible light.…”