Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP

Abstract

Direct recombination enhanced annealing of the radiation-induced defect H2 in p InGaP has been observed by deep level transient spectroscopy (DLTS). Detailed analysis of the annealing data at zero and reverse bias shows that annealing rates are independent of the defect charge state or this defect interacts with the two bands, i.e., is a recombination center trapping alternatively an electron, then a hole. An experiment based on minority carrier capture on a majority trap by the double carrier pulse DLTS technique further supports the evidence that H2 has a large minority carrier capture cross section and is an efficient nonradiative recombination center. Recombination-enhanced defect annealing rates obeys a simple Arrhenius law with an activation enthalpy of 0.51±0.09 eV, in contrast to athermal processes observed in GaP. Detailed analysis of results reveals that the mechanism involved in the minority carrier injection annealing of the H2 defect is energy release mechanism in which enhancement is induced by the energy which is released when a minority carrier is trapped on the defect site. Finally, analysis of the depth profiles data relates that H2 acts as a donor, which partially compensates the acceptors.

Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

“…24 The defect migration is thus increased. 25 Recombination enhanced annealing was previously reported for the EH1 and EH3 peaks in lowenergy electron irradiated 4H-SiC. 26 In this study, low-electron irradiated n-type 4H-SiC epilayers were investigated by DLTS.…”

Modelling of solar cell degradation in space

“…Studies necessary to get all the necessary data (in unirradiated as well as irradiated materials) for GaAs and GaInP materials have been systematically performed over years: from 1985 to 2005 for GaAs [1][2][3][4][6][7][8]12,19,20,[22][23][24] and from 1998 to 2003 for GaInP [2,5,7,8,[18][19][20]23]. The DLTS technique provides only an order of magnitude for s (through extrapolation to infinite temperature T of the plot log e n versus 1/T determined in a narrow temperature range).…”

“…For instance, an equivalent fluence of 10 16 cm À 2 1 MeV electrons, which corresponds to a typical space condition, introduces a total of 10 16 cm À 3 defects in GaAs (1) while the emitter and base of a cell are doped at a level of several 10 17 cm À 3 . Systematic studies, combining measurements of I-V characteristics in dark and under illumination, electroluminescence, time resolved photoluminescence (TRPL) and deep level transient spectroscopy (DLTS) performed on single GaAs and GaInP junctions, have allowed us to identify, characterize and measure the concentrations and the introduction rates (for 1 MeV electrons only) of the native and irradiation induced defects acting as non-radiative recombination centers in these two materials [1][2][3][4][5][6][7][8].…”

Cation and anion vacancies in proton irradiated GaInP

“…5 Recently this has been explained in terms of certain hole traps, which, during minority carrier injection have significant REA rates at room temperature and relatively low current density. 6 On the other hand, the previously mentioned midgap electron trap has been observed to anneal at higher current densities and temperatures. At the same time, a second electron trap has been observed to increase in concentration during REA under similar conditions.…”