Recombination lifetime using the pulsed MOS capacitor

Contents 1. bitroduction 2. Space-charge and quasi-neutral region generation 3. Theory of the non-equilibrium MOS capacitor 4 . Pulsed techniques 4.1 Zerbst method [4] 4.2 Heiman method [6] 4.3 Huang method [lo] 4.4 Calzolari current/capacitance transient method [14, 151 4.5 Trullemans and van de Wiele method [31] 4.6 Kano method [16] 4.7 Rabbani method [21] 5. Voltage sweep techniques 5.1 Pierret method [12, 131 5.2 Gorban method [17] 5.3 Taniguchi method [lS] 5.4 Lin method [22] 5.5 Kaplan method [20] 5.6 Tiwari method [23] 5.7 Kuper and Grimbergen method [33] 6. Charge measurement 6.1 Hofstein method [5] 6.2 Viswanathan method [37] 7 . Discussion References

show abstract

“…with the effective diffusion length L A [24] cosh ( a ) + (s,L,/D,) sinh ( a ) (s,L,/D,) cosh ( a ) + sinh (i)…”

Section: Space-charge and Quasi-neutral Region Generationmentioning

confidence: 99%

The Pulsed MIS Capacitor. A Critical Review

Kang

Schroder

1985

phys. stat. sol. (a)

View full text Add to dashboard Cite

show abstract

“…where q is the electron charge, n i is the intrinsic carrier concentration in the substrate, A is the area of the MOS capacitor, and  g is the generation lifetime. In this work, we assume that at room temperature the diffusion component in Equation (3) is much lower than the generation component, which usually is quite high for silicon [1].…”

Section: B Mathematical Modelingmentioning

confidence: 99%

“…The pulsed metal-oxide-semiconductor (MOS) capacitor transient [1] is the most frequently method used to determine the minority carrier generation lifetime and the surface generation velocity. Several methods for investigate the generation lifetime in MOS capacitor have been developed: current-capacitance (I-C-t) [1], Zerbst capacitance-time (C-t) technique [3], and linear sweep techniques [4], among others [6]. The knowledge of the generation lifetime τ g is important for monitoring technological processes for device fabrication based on high-resistivity silicon substrates as photodetectors, particles counters, and charge coupled devices (CCD).…”

Section: Introductionmentioning

confidence: 99%

“…The knowledge of the generation lifetime τ g is important for monitoring technological processes for device fabrication based on high-resistivity silicon substrates as photodetectors, particles counters, and charge coupled devices (CCD). This is due to the strong dependence of the device performance on the substrate characteristics such as the crystalline defects density, heavy metal atoms contamination, and the interface state density [1], parameters that can be strongly changed during the chemical and high temperature technological processes.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Simple Method to Obtain the Generation Lifetime in MOS Capacitors

Malik¹,

Temoltzi-Avila²,

Hidalga-W³

2018

IJNTR

View full text Add to dashboard Cite

This paper describes a new simple method for the estimation of the generation lifetime in MOS capacitors fabricated on high resistivity silicon substrates. In this method, the transition between the strong inversion initial steady state and the non-equilibrium deep depletion state occurs by applying a triangular gate voltage. The mathematical model of the proposed method is presented. The generation lifetime value, τ g = 517 ± 40 µs, obtained with our current-triangular sweep voltage method agrees with the 510  30 s value obtained by the C-t Zerbst method, and the 517  15 s value obtained by using the I-C-t characteristics for a pulsed MOS capacitor. The results obtained in this work show that the proposed simple method is useful as an express monitoring tool for an estimation of the generation lifetime. Index Terms Current-Triangular Sweep Voltage Method, non-equilibrium deep depletion, generation lifetime, MOS capacitor.

show abstract

“…5,10 In the pulsed MOS capacitor method the MOS device is pulsed from deep inversion into a slight accumulation state while increasing the pulse width from less than the recombination time to greater than the recombination time. 11,12 This method requires specialized instrumentation to transmit the narrow pulses through the capacitance meter and only reveals the effective lifetime of the sample. Numerous other techniques for lifetime measurement have been cataloged in the work by Schroder.…”

Section: Determination Of Recombinative Lifetime and Surface Recombinmentioning

confidence: 99%

Determination of recombinative lifetime and surface recombination velocities from wavelength dependence of photocurrent in insulator-semiconductor structures

Mostarshed¹,

Darling

1996

Journal of Applied Physics

View full text Add to dashboard Cite

A method is described for extracting bulk minority carrier lifetimes and surface recombination velocities from insulator-semiconductor structures. Recombination in the bulk and at the two surfaces of the wafer are distinguished by using the wavelength dependence of the penetration depth of the incident light flux. Pulse modulated light from various wavelength light-emitting diodes is used to create excess minority carrier holes which are collected in the depletion region of an inverted surface. The spectral dependence of the resulting photocurrents can then be used to determine the surface recombination velocities and the bulk lifetime. A model is described which provides relationships between the bulk minority carrier lifetime, the surface recombination velocities, the absorption coefficient of the incident light, and the resulting capacitive current. The experimental values of lifetime and surface recombination velocity are combined to obtain an effective lifetime which is in good agreement with a combined lifetime obtained from the photoconductive decay technique.

show abstract

Recombination lifetime using the pulsed MOS capacitor

Cited by 42 publications

References 17 publications

The Pulsed MIS Capacitor. A Critical Review

The Pulsed MIS Capacitor. A Critical Review

A Simple Method to Obtain the Generation Lifetime in MOS Capacitors

Determination of recombinative lifetime and surface recombination velocities from wavelength dependence of photocurrent in insulator-semiconductor structures

Contact Info

Product

Resources

About