Recombination measurement of n-type heavily doped layer in high/low silicon junctions

Insertion of a thin highly doped crystalline layer in silicon heterojunction solar cells: Simulation and perspectives towards a highly efficient cell concept

“…The lifetime values obtained with this model are below the ones that can be found in literature from other models. 18,19 As a consequence the potential beneficial effects of the (p þ )c-Si layer insertion are not overestimated.…”

Homo-heterojunction concept: From simulations to high efficiency solar cell demonstration

“…The lifetime values obtained with this model are below the ones that can be found in literature from other models [52,53]. As a consequence the beneficial effects of the (p + ) c-Si layer insertion will not be overestimated.…”

Analysis of n+p silicon junctions with varying substrate doping concentrations made under ultraclean processing technology

“…͑11͒, which is a well-established experimental dependence for n . [12][13][14][17][18][19] Figure 16͑a͒ shows the n dependence on N s with ni ϭ2.63ϫ10 Ϫ5 s, which gave the best fit. The slope at the high concentration region of Fig.…”

“…This is expressed by the constant B(ϭdN t /dN s ) as well as ni , which are process dependent parameters. 17,18 The creation of these levels does not automatically imply that all of them participate in the recombination process, but only a fraction of them, which increases with N s . An explanation of the lifetime dependence of minority carriers in the neutral parts of the junction on doping concentration was given by Meier et al 16 through the Fermi level position.…”

“…͑10͒ into Eq. ͑4͒ yields a very familiar experimental expression for the dependence of minority carrier lifetime on N s , which was used by several researchers, [12][13][14][17][18][19] for both p and n , namely:…”