2008
DOI: 10.1016/j.solmat.2007.11.005
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Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination

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Cited by 76 publications
(72 citation statements)
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“…This points to the fact that band offsets may play a role too in operation of a-Si:H films as semi-permeable carrier membranes, and thus the operation of SHJ devices. More quantitatively, simulation programs such as AFORS-HET developed by HZB in Germany [169], or others [170], or device-circuit modeling [171] may further aid in understanding SHJ device operation.…”
Section: Basic Considerationsmentioning
confidence: 99%
“…This points to the fact that band offsets may play a role too in operation of a-Si:H films as semi-permeable carrier membranes, and thus the operation of SHJ devices. More quantitatively, simulation programs such as AFORS-HET developed by HZB in Germany [169], or others [170], or device-circuit modeling [171] may further aid in understanding SHJ device operation.…”
Section: Basic Considerationsmentioning
confidence: 99%
“…This approach has been amply used in recent years for dyesensitized solar cells (DSC) [2][3][4][5][6][7][8] and organic solar cells, 9,10 while there are only a few works to date on solid state devices, such as those based on nanocrystalline/amorphous Si, [11][12][13] thin-film CdTe/CdS, 14 GaAs/Ge 15,16 and CdS/Cu(In,Ga)Se 2 solar cells.…”
Section: Introductionmentioning
confidence: 99%
“…1 The power of impedance analysis in this case lies in its ability to separate contributions from different layers or regions of a solar cell structure. 2 The method was shown to provide detailed assessment of the device properties, as well as of the possible impact on the overall performance, from each of the device regions individually.…”
Section: Introductionmentioning
confidence: 99%
“…2 Here a series of thin-film devices based on the CdTe/CdS p-n junction and grown by metal organic chemical vapor deposition 8,9 ͑MOCVD͒ is being investigated. The study is focused on the critical aspects of device structure, such as ͑i͒ the effect from incorporation of a thin barrier layer on device electrical properties and performance; ͑ii͒ the change in properties induced by a variation of the doping level in the p-type CdTe absorber; ͑iii͒ the comparison of impedance characteristics between the samples with and without an extra highly doped CdTe:As layer next to the metal back contact.…”
Section: Introductionmentioning
confidence: 99%