Reconfigurable logic via gate controlled domain wall trajectory in magnetic network structure

Abstract

An all-magnetic logic scheme has the advantages of being non-volatile and energy efficient over the conventional transistor based logic devices. In this work, we present a reconfigurable magnetic logic device which is capable of performing all basic logic operations in a single device. The device exploits the deterministic trajectory of domain wall (DW) in ferromagnetic asymmetric branch structure for obtaining different output combinations. The programmability of the device is achieved by using a current-controlled magnetic gate, which generates a local Oersted field. The field generated at the magnetic gate influences the trajectory of the DW within the structure by exploiting its inherent transverse charge distribution. DW transformation from vortex to transverse configuration close to the output branch plays a pivotal role in governing the DW chirality and hence the output. By simply switching the current direction through the magnetic gate, two universal logic gate functionalities can be obtained in this device. Using magnetic force microscopy imaging and magnetoresistance measurements, all basic logic functionalities are demonstrated.

Complementary logic operation based on electric-field controlled spin–orbit torques

“…Despite recent successes in the operation of the spin FET with a semiconducting channel [6][7][8], further developments are required to improve the signal at room temperature and to secure the device scalability. The second approach is to utilize metallic structures in which a logic operation is performed by using domain wall motion [9][10][11][12], magnetization switching [13,14], and spin wave propagation [15]. These metal-based spintronic devices are advantageous as they operate at room temperature.…”

Observation of a topologically protected state in a magnetic domain wall stabilized by a ferromagnetic chemical barrier

“…Additionally, in other DW based devices such as magnetic memories, the use of very resilient topologically protected DWs is very relevant for the durability of the information stored. The concept of a chemical barrier is in principle applicable to any chiral spin texture including skyrmions 27 and to any DW-based storage 28 , logic 29 , 30 and sensing device in general 31 .…”

Demonstration of Complementary Ternary Graphene Field-Effect Transistors

“…At the architecture level, starting with monolithic 3D architecture, many new architectures such as neuromorphic architecture, reconfigurable logic architecture, logic-memory hybrid architecture, multivalued logic architecture are being investigated111213141516. However, none of the above devices or architecture options have been accepted as a dominant technical option for post-silicon and post von Neumann technology.…”