Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n
                     +-Si-SiO2-n-Si heterostructures

Zhdan, A. G.; Kukharskaya, N. F.; Naryshkina, V. G.; Чучева, Г. В.

doi:10.1134/s1063782607090187

Cited by 3 publications

(1 citation statement)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The algorithm for searching the U(z) function was applied to the results of the measurements of the quasiequilibrium capacitance-voltage (C-V) characteristic and quasi-steady state I-V characteristic of the tunneling current, performed for the Al-n + -Si-SiO 2 -n-Si-Al structure at 293 K [14]. A layer of degenerate polysilicon (n + -Si) and an n-Si wafer were doped with phosphorus.…”

Section: Reconstruction Of the Potential Profile U(z) Using Experimenmentioning

confidence: 99%

10.1007/s11453-008-1013-1

2010

CrossRef Listing of Deleted DOIs

View full text Add to dashboard Cite

A method for reconstruction of the potential profile in an insulating layer is developed on the basis of the field dependence of the tunneling current through the layer. The coordinates of the turning points as functions of the voltage applied to the insulating layer are determined in quasi-classical approximation from the tunneling current-voltage characteristics. The potential is constructed using these functions. The developed algorithm was applied to an n + -Si-SiO 2 -n -Si structure with oxide thickness of 37 Å. Typically, for a real potential profile, there exist relatively thick layers (of ~10 Å) with lowered potential that separate SiO 2 from the actual tunneling barrier.

show abstract

Section: Reconstruction Of the Potential Profile U(z) Using Experimenmentioning

confidence: 99%

10.1007/s11453-008-1013-1

2010

CrossRef Listing of Deleted DOIs

View full text Add to dashboard Cite

show abstract

Mechanism and Features of Field Emission in Semiconductors

Zhukov¹,

Михайлов

Mosiyash³

2019

Semiconductors

View full text Add to dashboard Cite

Self-consistent performance modeling for dual band MIS UV photodetectors based on Si/SiO₂multilayer structure

et al. 2012

View full text Add to dashboard Cite

In this paper, we present a self-consistent theoretical model for a metal-insulator semiconductor (MIS) dual band ultraviolet (UV) photodetector with a modified structure implying an arbitrarily defined insulating potential barrier as its active region. Utilizing our proposed model, the dark and photocurrent density-voltage (J-V) characteristics of MIS UV photodetectors with multi-quantum wells of silicon (MQWs) are calculated. We demonstrate that dark current is reduced in the suggested structure, because the electron-tunneling probability becomes unity at energies coincident with the peak detection wavelength. This is due to the resonant tunneling and decreases at energies that are significantly smaller than this optimum value. In consequence, the number of carriers contributing to the dark current, which have a broad energy distribution at high temperatures, will decrease. It is also shown that the designed structure could detect two individual UV wavelengths, simultaneously. The width of each Si quantum well has been considered at around 1.2 nm, in order to observe these two absorption peaks in the middle and near UV regions of photon spectrum (about 365 nm, 175 nm).

show abstract

Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures

Cited by 3 publications

References 12 publications

10.1007/s11453-008-1013-1

10.1007/s11453-008-1013-1

Mechanism and Features of Field Emission in Semiconductors

Self-consistent performance modeling for dual band MIS UV photodetectors based on Si/SiO₂multilayer structure

Contact Info

Product

Resources

About

Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures

Cited by 3 publications

References 12 publications

10.1007/s11453-008-1013-1

10.1007/s11453-008-1013-1

Mechanism and Features of Field Emission in Semiconductors

Self-consistent performance modeling for dual band MIS UV photodetectors based on Si/SiO2multilayer structure

Contact Info

Product

Resources

About

Self-consistent performance modeling for dual band MIS UV photodetectors based on Si/SiO₂multilayer structure