Recovery Characteristic of Anomalous Stress Induced Leakage Current of 5.6nm Oxide Films

Inatsuka, T.; Kumagai, Yoshinao; Kuroda, Rihito; Teramoto, Akinobu; Sugawa, Shigetoshi; Ohmi, Toshihito

doi:10.7567/ssdm.2011.d-2-4

Cited by 3 publications

(3 citation statements)

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“…Therefore time-dependent characteristics of SILC can also be evaluated with high precision [13,14]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…This test circuit directly measure the gate leakage current of small area MOSFETs in a short time with high precision [13], which enables the multifaceted characterization of current values of a localized leakage spot. In the previous work, we have reported the anomalous characteristics of SILC which indicate the gate leakage current in the order of 10 -15 to 10 -13 A [12,14]. In this paper, detailed characteristics of SILC values at individual leakage spots and their distribution are experimentally demonstrated in the current range from 10 -17 to 10 -13 A.…”

Section: Introductionmentioning

confidence: 88%

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Demonstrating distribution of SILC values at individual leakage spots

Inatsuka

Kuroda

Teramoto

et al. 2013

2013 IEEE International Reliability Physics Symposium (IRPS)

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Stress induced leakage current (SILC) in the order of 10 -17 to 10 -13 A were statistically evaluated by using an advanced test circuit. In this paper, the distribution of SILC was evaluated by changing measurement electric fields, electric stress intensities, device area, and oxide thickness. The distribution of SILC is determined by the current values at individual leakage spots when the device area is sufficiently small. When the electric stress intensity and the measurement field are small, the distribution of logarithm of SILC follows the Gumbel distribution because the maximum current values of the leakage spots determine the gate leakage current in small area MOSFETs. We also evaluated the time-dependent characteristics of SILC in small area MOSFETs. The random telegraph signals of gate leakage current were observed which also indicates the current values of individual leakage spots.

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“…Therefore time-dependent characteristics of SILC can also be evaluated with high precision [13,14]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 88%

Demonstrating distribution of SILC values at individual leakage spots

Inatsuka

Kuroda

Teramoto

et al. 2013

2013 IEEE International Reliability Physics Symposium (IRPS)

Self Cite

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“…This enhanced leakage, called anomalous SILC, has been also identified as a trap-related phenomenon, because of its low activation energy [188,189] and fluctuations resulting from capture/emission processes [185,190]. However, a two-trap assisted tunneling process (2TAT) has now been invoked to explain the experimental data of individual cells [191,192], as depicted in Figure 17c.…”

Section: Retention After Cycling and Silcmentioning

confidence: 99%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

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