A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s

Kumagai, Yoshinao; Inatsuka, T.; Kuroda, Rihito; Teramoto, Akinobu; Suwa, Tomoyuki; Sugawa, Shigetoshi; Ohmi, Tadahiro

doi:10.1109/icmts.2012.6190631

Cited by 4 publications

(4 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore time-dependent characteristics of SILC can also be evaluated with high precision [13,14]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…We have reported that using this test circuit, we can evaluate the extremely small gate leakage current of 10 -17 A with high precision at -30 °C [13]. In this study, the gate leakage current in the order of 10 -17 to 10 -13 A were evaluated at -30 °C.…”

Section: Introductionmentioning

confidence: 98%

“…In addition, a large number of MOSFETs must be evaluated because of the statistic nature of SILC. For this purpose we have proposed the test circuit for the evaluation of gate leakage current in a large number of small area MOSFETs [11][12][13]. This test circuit directly measure the gate leakage current of small area MOSFETs in a short time with high precision [13], which enables the multifaceted characterization of current values of a localized leakage spot.…”

Section: Introductionmentioning

confidence: 99%

“…For this purpose we have proposed the test circuit for the evaluation of gate leakage current in a large number of small area MOSFETs [11][12][13]. This test circuit directly measure the gate leakage current of small area MOSFETs in a short time with high precision [13], which enables the multifaceted characterization of current values of a localized leakage spot. In the previous work, we have reported the anomalous characteristics of SILC which indicate the gate leakage current in the order of 10 -15 to 10 -13 A [12,14].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Demonstrating distribution of SILC values at individual leakage spots

Inatsuka

Kuroda

Teramoto

et al. 2013

2013 IEEE International Reliability Physics Symposium (IRPS)

Self Cite

View full text Add to dashboard Cite

Stress induced leakage current (SILC) in the order of 10 -17 to 10 -13 A were statistically evaluated by using an advanced test circuit. In this paper, the distribution of SILC was evaluated by changing measurement electric fields, electric stress intensities, device area, and oxide thickness. The distribution of SILC is determined by the current values at individual leakage spots when the device area is sufficiently small. When the electric stress intensity and the measurement field are small, the distribution of logarithm of SILC follows the Gumbel distribution because the maximum current values of the leakage spots determine the gate leakage current in small area MOSFETs. We also evaluated the time-dependent characteristics of SILC in small area MOSFETs. The random telegraph signals of gate leakage current were observed which also indicates the current values of individual leakage spots.

show abstract

“…Therefore time-dependent characteristics of SILC can also be evaluated with high precision [13,14]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%