Recrystallization behavior of high-dose Mn + -implanted GaAs

Study on the Raman scattering measurements of Mn ion implanted GaN

“…As for the dependence of Mn implantation dose on I TO /I E H 2 , it is expected that more residual damage exists in the implanted material with increasing implantation dose. This phenomenon has also been reported by many authors in investigating Mn implanted GaAs [22], where the intensity ratio of I TO /I LO was used as a measure of the damage degree. Fig.…”