Rectifying Effect in a High-Performance Ballistic Diode Bridge Based on Encapsulated Graphene with a Unique Design

Abstract

The long mean free path close to a micrometer in encapsulated graphene enabled us to rectify currents ballistically at room temperature. In this study, we introduce a ballistic rectifier that resembles a diode bridge and is based on graphene encapsulated using hexagonal boron nitride. Our device's asymmetric geometry combined with the exploitation of the ratcheting effect means that it can operate successfully and provides excellent performance. The device's estimated responsivities at 38 000 V/W for holes and 23 000 V/W for electrons at room temperature are among the highest values for a ballistic device reported to date.

A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate‐Tunable Rectification Ability

“…[23][24][25][26] Four-terminal graphene ballistic rectifiers with this heterostructure configuration have been reported to have the highest responsivity of 38 000 V W −1 . [27][28][29] However, the dimensions of these devices are relatively large, with an overall length and width in the μm range and a neck width exceeding 100 nm. Such large dimensions reduce integration density on chips, lead to increased parasitic capacitance, and the large neck width further limits the devices' performance.…”

Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping

“…8 To overcome this issue, researchers have adopted alternative strategies to design and synthesize visible-light phototransistors with a visible-light absorption layer or by fabricating heterojunction photodetectors with IGZO to facilitate photoinduced charge carriers, including the incorporation of selenium capping layers (SCLs), 9 CNTs/graphene quantum dots (QDs), [10][11][12][13] QDs (CdSe, CdS, and PbS), 7,14,15 perovskites/conducting polymers, 7,16 conducting metal nanoparticles, 17 or two dimensional (2-D) materials. [18][19][20][21][22][23][24] These approaches attempt to modify and tune the bandgap of the absorption layer to absorb the desired ranges of light. However, obtaining an improved photocurrent and photoresponse using layered transition metal dichalcogenides (LTMDs), particularly in large area and wafer-scale IGZO films, remains challenging.…”