Red Semiconductor Disk Lasers by Intracavity Frequency Conversion

Okhotnikov, Oleg G.; Guină, Mircea

doi:10.1002/9783527630394.ch3

Cited by 22 publications

(33 citation statements)

References 45 publications

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“…The combination of quantum dash or dot lasers should be interesting to explore since single section devices based on those materials can show strong mode-locking without the use of an SA. Another direction to look at are the optically pumped semiconductor disk lasers 2 . One could try to move to a geometry which is similar with wider amplifier mode sizes and shorter amplifiers which should minimize self-phase modulation.…”

Section: Resultsmentioning

confidence: 99%

“…Typically these applications have been demonstrated using solid state mode-locked laser (MLL) systems e.g. fiber laser or Titanium:sapphire laser systems 1 or optically pumped semiconductor lasers 2 . Such systems can be flexible and this flexibility is used to meet the widely varying requirements for the laser systems in the different applications.…”

Section: Introductionmentioning

confidence: 99%

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Mode-locked lasers in InP photonic integrated circuits

et al. 2017

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Document VersionAuthor's version before peer-review Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTIn this paper an overview is presented of results obtained with mode-locked semiconductor laser systems that are monolithically integrated using a standardized photonic integration platform based on InP. The laser systems are operating around 1550nm. In this technology platform the basic components that form the laser circuits such as amplifiers, passive waveguides and filters, as well as the semiconductor processing are standardized. Several of the possibilities that such a standardized technology offer are demonstrated by a number of examples of realized devices such as low repetition rate mode-locked lasers, a stabilized comb system and a wide frequency comb source.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mode-locked lasers in InP photonic integrated circuits

et al. 2017

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“…1,2 The four key features of ultrafast lasers that have led to their numerous applications are: ultra-short pulse duration, high pulse repetition rate, broad spectrum and high peak power 1 . Ultra-short pulse durations enable highresolution measurements in the time domain and this allows for improved temporal resolution for the observation of highspeed phenomena such as chemical reactions 2,3 , carrier relaxation in semiconductors 4 and electro-optical sampling of highspeed electronics 5,6 . Lasers with high repetition rates (in the multi-gigahertz range) are essential components in optical interconnects 7 , high-capacity telecommunication systems 8 and clocks.…”

Section: Introductionmentioning

confidence: 99%

Degradation mechanism of SESAMs under intense ultrashort pulses in modelocked VECSELs

Addamane

Shima

Laurain

et al. 2018

Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII

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“…Optically-pumped vertical external-cavity surface-emitting lasers (VECSELs) [1] are a rapidly evolving technology which exhibits a wide spectral coverage in an inexpensive and compact setup [2][3][4][5]. Their foundation on semiconductor technology has the major advantage of emission wavelength flexibility which is easily achieved by bandgap engineering.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast optical parametric oscillator pumped by a vertical external-cavity surface-emitting laser (VECSEL)

et al. 2017

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Abstract:We report the first optical parametric oscillator synchronously pumped by a SESAM modelocked vertical external-cavity surface-emitting laser (VECSEL). As a nonlinear medium, we use a periodically poled MgO:PPLN crystal. The VECSEL operates at a wavelength of 982 nm and a repetition rate of 198 MHz. The pump radiation is converted to signal and idler wavelengths tunable in the ranges of 1.4-1.8 µm and 2.2-3.5 μm, respectively, simply by a change of the poling period and crystal temperature. The signal pulses have a duration between 2 ps to 4 ps and an average output power up to 100 mW.

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Red Semiconductor Disk Lasers by Intracavity Frequency Conversion

Cited by 22 publications

References 45 publications

Mode-locked lasers in InP photonic integrated circuits

Mode-locked lasers in InP photonic integrated circuits

Degradation mechanism of SESAMs under intense ultrashort pulses in modelocked VECSELs

Ultrafast optical parametric oscillator pumped by a vertical external-cavity surface-emitting laser (VECSEL)

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