Redshifting and broadening of quantum-well infrared photodetector's response via impurity-free vacancy disordering

Sengupta, D. K.; Jandhyala, Vikram; Kim, Sangsig; Fang, W.; Malin, J.; Apostolakis, P.J.; Hseih, K. C.; Chang, Yia‐Chung; Chuang, Shun Lien; Bandara, S. V.; Gunapala, Sarath D.; Feng, Milton; Michielssen, E.; Stillman, G. E.

doi:10.1109/2944.720488

Cited by 20 publications

(19 citation statements)

References 32 publications

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“…In addition to varying growth parameters such as growth interruption times, 2 group-V overpressure, 3 capping rate, 4 and the use of vicinal surfaces, 5 techniques such as the indium-flush procedure 6,7 have been developed with the intention to trim or convert an inhomogeneous QD population into quantum disks of approximately equal height. In the drive of finding a versatile bandgap tuning process, techniques such as laser-induced annealing, 8 impurity-free vacancy disordering, 9 ionimplantation-induced interdiffusion, 10 grown-in defects, 11,12 and dielectric capping 13 have also been proposed. Bandgap tuning can also be simply achieved after epitaxial growth by conventional or rapid thermal annealing ͑RTA͒ to promote atomic interdiffusion between QD and barrier materials, this modifies the QD profile and consequently alters the energy levels of the structure.…”

mentioning

confidence: 99%

Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing

Girard

Dion

Desjardins

et al. 2004

Applied Physics Letters

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We have investigated the effect of post-growth rapid thermal annealing on the low-temperature photoluminescence (PL) spectra of self-assembled InAs quantum dots (QDs) grown in InP(001) by chemical-beam epitaxy using both conventional and modified capping procedures. As-grown samples are characterized by a broad emission peak centered near 800–900 meV corresponding to distinct QD families of different sizes with no observable wetting-layer emission. Rapid thermal anneals were performed at 650 to 800 °C for 210 s, resulting in blueshifts of up to 120 meV due to intermixing. While the PL emission energies of the various QD families shift at similar rates upon annealing, the peak widths remain approximately constant. Finally, we show that the growth of a low-temperature InP cap layer containing a large number of point defects significantly enhances interdiffusion and results in PL blueshifts in excess of 300 meV.

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mentioning

confidence: 99%

Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing

Girard

Dion

Desjardins

et al. 2004

Applied Physics Letters

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“…In the past decade, multiwavelength IR photon detection has been obtained in QW infrared photodetectors (QWIPs) using the QWI techniques including IFVD (Sengupta et al, 1998) and IIID Johnston et al, 1999). In the past decade, multiwavelength IR photon detection has been obtained in QW infrared photodetectors (QWIPs) using the QWI techniques including IFVD (Sengupta et al, 1998) and IIID Johnston et al, 1999).…”

Section: Two-color Qdip By Selective Area Interdiffusionmentioning

confidence: 99%

Disordering of Quantum Structures for Optoelectronic Device Integration

Mokkapati

Barik³

et al. 2011

Comprehensive Semiconductor Science and Technology

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“…The techniques have been used successfully in fabricating optoelectronic devices [8][9][10][11][12] such as lasers and waveguides. Quantum well intermixing techniques include [7]: laser induced disordering, impurity free vacancy disordering, impurity induced disordering and ion implantation induced disordering, and each has been used to tune the detection wavelength of QWIPs [13][14][15][16][17][18][19]. Amongst the various intermixing techniques, ion implantation induced disordering is preferred because it is more controllable than the others.…”

Section: Introductionmentioning

confidence: 98%