Reduced lattice temperature high-speed operation of pseudomorphic InGaAs/GaAs field-effect transistors

Laskar, J.; Maranowski, S. A.; Caracci, S. J.; Feng, Milton; Kolodzey, J.

doi:10.1063/1.106032

Applied Physics Letters

1991

DOI: 10.1063/1.106032

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Reduced lattice temperature high-speed operation of pseudomorphic InGaAs/GaAs field-effect transistors

J. Laskar

S. A. Maranowski

S. J. Caracci

et al.

Abstract: Highspeed InP/InGaAsP metalsemiconductor fieldeffect transistors grown by chloride vapor phase epitaxy Appl.

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Cited by 9 publications

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Reduced lattice temperature high-speed operation of pseudomorphic InGaAs/GaAs field-effect transistors

Abstract: Highspeed InP/InGaAsP metalsemiconductor fieldeffect transistors grown by chloride vapor phase epitaxy Appl.

Cited by 9 publications

References 8 publications

Noise and gain comparison of 0.25 μm gate MESFETs and PHEMTs for low power wireless communication circuits

Noise and gain comparison of 0.25 μm gate MESFETs and PHEMTs for low power wireless communication circuits

Cryogenic behavior of Ultrashort gate AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs HEMT's

On the speed and noise performance of direct ion-implanted GaAs MESFETs

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