Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

Linder, K. K.; Zhang, F. C.; Rieh, Jae-Sung; Bhattacharya, Pallab; Houghton, D. C.

doi:10.1063/1.119132

Cited by 121 publications

(64 citation statements)

References 21 publications

(19 reference statements)

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“…This was consistent with the fact that the growth scheme of using LT-Si buffer was usually successful for x Յ 0.3 when the buffer was grown at ϳ400°C. 12,13,17 Experiments by using positron annihilation spectroscopy have proven that a Si layer grown at 400°C contained the highest point defect density. 30 However, a single LT-Si buffer clearly showed a limited capability for enhancing the relaxation of the Si 0.6 Ge 0.4 layer, as revealed in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…However, none of those were adequate enough to explain why the LT-buffer growth scheme has been unsuccessful in fabrication of highquality Si 1−x Ge x VSs mainly with 0.4Յ x Ͻ 0.6. [17][18][19] The relaxed SiGe VSs within this Ge composition range exhibited the maximal surface roughness and threading dislocation density, 18 suggesting a much more complicated relaxation process. 19 Therefore, a better understanding must be obtained in order to clarify the essential mechanism of the influence of LT growth on the strain-relaxation process.…”

Section: Introductionmentioning

confidence: 99%

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Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy

Zhao

Hansson

2009

Journal of Applied Physics

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A double-low-temperature-buffer variable-temperature growth scheme was studied for fabrication of strain-relaxed thin Si 0.6 Ge 0.4 layer on Si͑001͒ by using molecular beam epitaxy ͑MBE͒, with particular focuses on the influence of growth temperature of individual low-temperature-buffer layers on the relaxation process and final structural qualities. The low-temperature buffers consisted of a 40 nm Si layer grown at an optimized temperature of ϳ400°C, followed by a 20 nm Si 0.6 Ge 0.4 layer grown at temperatures ranging from 50 to 550°C. A significant relaxation increase together with a surface roughness decrease both by a factor of ϳ2, accompanied with the cross-hatch/ cross-hatch-free surface morphology transition, took place for the sample containing a low-temperature Si 0.6 Ge 0.4 layer that was grown at ϳ200°C. This dramatic change was explained by the association with a certain onset stage of the ordered/disordered growth transition during the low-temperature MBE, where the high density of misfit dislocation segments generated near surface cusps largely facilitated the strain relaxation of the top Si 0.6 Ge 0.4 layer.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy

Zhao

Hansson

2009

Journal of Applied Physics

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“…However, major changes that occur in the fluence range of 5x10 16 3x10 17 ions/cm 2 will be predominantly discussed here. Following irradiation, the samples were investigated by X-ray diffraction (XRD) (with Cu K α radiation), transmission electron microscopy (TEM) (with 300 keV electrons), scanning TEM (STEM) and energy dispersive X-ray (EDX) analysis.…”

Section: Methodsmentioning

confidence: 99%

“…First, a crystalline Si(c-Si) buffer-layer (~120 nm) was grown on a clean Si(001) wafer substrate at 700 o C, the typical epitaxial growth temperature for Si on Si. (A buffer-layer is usually used to improve the quality of technologically important materials, epitaxially grown on them [16]). A Ni layer (~15 nm) was then grown on the buffer-Si layer at room temperature (RT).…”

Section: Methodsmentioning

confidence: 99%

Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si

Banu

Satpati

Bhukta

et al. 2017

Journal of Applied Physics

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Abstract:Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (~5 nm)/Ni(~15 nm)/Si, grown under ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si + ions. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed for analysis. With increasing ion fluence ion beam mixing occurs and more and more Si is incorporated into the Ni layer and this layer gets amorphized. At an even higher fluence a recrystallized uniform nickel monosilicide (η-NiSi) layer is formed. Several planar spacings of different Miller indices of η-NiSi have been observed in XRD and TEM. Additionally, an oscillatory amorphization and recrystallization has been observed in the substrate Si with increasing ion fluence. To our knowledge, this has never been observed in ion irradiation of bare Si in decades of work in this area. The oscillatory amorphization/recrystallization in Si is apparently Ni-induced. Irradiation displaces Ni and produces a distribution of Ni in amorphized Si. Irradiation at a higher fluence produces two recrystallized Si bands in amorphous Si with concomitant accumulation of Ni at the amorphous/crystalline interfaces. On further increase of irradiation fluence the recrystallized Si bands again pass through amorphization and recrystallization. The total thickness of recrystallized as well as amorphous Si shows an oscillatory behavior as a function of ion fluence.

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“…However, they do not mention the low-temperature Si ͑LT-Si͒ technique, 5,6 the LT-SiGe technique, 7 or the He/ H implantation technique. 8,9 All of these methods have given much better quality material than that presented in Ref.…”

mentioning

confidence: 99%

Comment on “Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing” [Appl. Phys. Lett. 83, 4321 (2003)]

Chrastina

2004

Applied Physics Letters

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Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

Cited by 121 publications

References 21 publications

Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy

Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy

Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si

Comment on “Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing” [Appl. Phys. Lett. 83, 4321 (2003)]

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