Reduction of effective dielectric constant of gate insulator by low-resistivity electrodes

Saito, Kimitoshi; Jin, Yoshito; Shimada, Masaru

doi:10.1063/1.1519736

Cited by 11 publications

(8 citation statements)

References 12 publications

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“…1,2 The formation of silicates is generally thought to be kinetically suppressed. [8][9][10][11][12][13][14][15][16] In this letter, we combine high-resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM), electron energy-loss spectroscopy (EELS), and calculations based on density functional theory to explore the nature and properties of these interfaces. [3][4][5][6][7] Generally, the device structure involves a compromise between maintaining sufficiently low Hf concentration that the dielectric remains amorphous during processing, and is therefore of high electrical quality, and achieving a sufficiently high Hf content to give a low SiO 2 equivalent thickness.…”

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confidence: 99%

Interface structure and non-stoichiometry in HfO2 dielectrics

Baik

Kim

Park

et al. 2004

Applied Physics Letters

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High-resolution electron microscopy, electron energy-loss spectroscopy, and first-principles theory are used to investigate the composition and electronic structure of HfO 2 dielectric layers deposited directly onto Si. A thin, nonstoichiometric, but Hf-free SiO 2 layer forms between the HfO 2 dielectric and the substrate, consistent with one-dimensional spinodal decomposition. Rapid thermal annealing crystallizes the HfO 2 , and the resulting grain boundaries within the HfO 2 are found to be O-depleted, with localized states within the bandgap. These localized states are thought to act as significant leakage pathways, and may be responsible for Fermi-level pinning at the dielectric/ contact interface.

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mentioning

confidence: 99%

Interface structure and non-stoichiometry in HfO2 dielectrics

Baik

Kim

Park

et al. 2004

Applied Physics Letters

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“…This series capacitance corresponds to a capacitance equivalent thickness (¼ t Á k SiO2 =k AlN ; t: physical thickness) of 2.5 nm. This capacitance equivalent thickness could increase for various reasons, such as the influence of the low-resistivity gate electrode, 13) or the influence of the relatively high-resistivity semiconductor (undoped InP) layer. 10,13) An interlayer between the AlN and InP could also cause the increase; however, we could not clearly observe an interlayer in the TEM photograph (Fig.…”

Section: C-v Characteristics Of As-deposited Aln Films By Ecrmentioning

confidence: 99%

Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering

Saito

Ono

Shimada

et al. 2005

Jpn. J. Appl. Phys.

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Amorphous AlN films deposited by sputtering using electron cyclotron resonance (ECR) plasma were used to form AlN/n-InP metal–insulator–semiconductor diodes. The AlN films were deposited without substrate heating. Capacitance–voltage (C–V) measurements showed a small hysteresis window of ∼35 mV for a 2-nm-thick AlN film, and frequency dispersion was much improved by post-deposition annealing at 200°C in an H2 gas atmosphere. We estimated the interface-trap density to be 3×1012 cm-2eV-1 by comparing 10-kHz and 1-MHz C–V curves. Small leakage currents of less than 2 mA/cm2 at a bias voltage of 1 V were obtained for the 2-nm-thick film. To clarify the effect of the deposition methods, AlN films were deposited by conventional magnetron sputtering. ECR sputtering provided better C–V and current-voltage characteristics than magnetron sputtering for as-deposited AlN films, showing that good metal–insulator–semiconductor (MIS) properties arise because of the suitable deposition method and the good combination of materials. An analysis of surface atoms on the InP substrate by secondary ion mass spectrometry showed a large oxygen concentration on the order of 1022 cm-3, which is not preferable for MIS diode properties. Surface cleaning using dilute HF reduced oxygen and carbon concentrations to less than half.

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“…In order to suppress the interfacial layer (IL) formation with relatively low dielectric constant and to make the equivalent oxide thickness (EOT) thinner, electron cyclotron resonance (ECR) plasma oxidation of HfN thin film has been proposed [14,15]. This method is expected to form a high quality ultra-thin HfO x N y films because the ECR plasma process is a low damage process [16][17][18][19][20] and the HfN layer would suppress the IL formation. An EOT of 1.29 nm was obtained so far by utilizing ECR plasma oxidation of 0.8 nm-thick HfN [14].…”

Section: Introductionmentioning

confidence: 99%

Investigation of PDA process to improve electrical characteristics of HfO<inf>x</inf>N<inf>y</inf> High-k dielectric formed by ECR plasma oxidation of HfN

Ohmi

Nakano

2007

2007 International Symposium on Semiconductor Manufacturing

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In this paper, post deposition annealing (PDA) processes such as Si wafer covering rapid thermal annealing (SWC-RTA) and rapid cooling process were investigated to improve electrical characteristics of HfO x N y films formed by ECR Ar/O 2 plasma oxidation of ultra-thin HfN films. An EOT of 0.96 nm with leakage current density of 0.26 A/cm 2 was obtained by utilizing SWC-RTA and rapid cooling. The obtained result shows the smallest equivalent oxide thickness (EOT) for the HfO x N y film formed by ECR plasma process so far. Effect of SWC-RTA process1-4244-1142-4/07/$25.00 ©2007 IEEE

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Reduction of effective dielectric constant of gate insulator by low-resistivity electrodes

Cited by 11 publications

References 12 publications

Interface structure and non-stoichiometry in HfO2 dielectrics

Interface structure and non-stoichiometry in HfO2 dielectrics

Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering

Investigation of PDA process to improve electrical characteristics of HfO<inf>x</inf>N<inf>y</inf> High-k dielectric formed by ECR plasma oxidation of HfN

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