Reduction of electron and hole trapping in SiO2 by rapid thermal annealing

We have performed a detailed comparison of the preirradiation l/f noise and the radiation-induced threshold voltage shifts due to oxide-trapped and interface-trapped charge, AVot and A&, for enhancement-mode, 3-pm gate, nchannel MOS transistors taken from seven different wafers processed in the same lot. These wafers were prepared with gate oxides of widely varying radiation hardness. We show that the preirradiation l/f noise levels of these devices correlate strongly with the postirradiation AVot, but not with the postirradiation AKt. These results suggest that l/f noise measurements may prove useful in characterizing and predicting the radiation response of MOS devices.between the preirmdiation current noise of MOS transistors and their radiation hardness. We find strong correlation between the preirradiation noise and postirradiation oxide-trapped charge density. In contrast, no clear correlation is observed between the preirradiation noise and the postirradiation interface-trapped charge density. The scaling of the noise with frequency, gate and drain voltage, and oxide-trapped charge density is consistent with a simple model that attributes the noise to tunneling events between the device channel and traps in the oxide. The model is considered to be quite preliminary, however, in that many questions remain unanswered regarding the exact nature of traps that cause the noise and their relationship to the postirradiation hole traps. Implications for total-dose hardness assurance testing are discussed.

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“…Hole traps and electron traps are known to exist in Si02 [31,32]. Oxygen vacancies tan, in some cases, trap both holes and electrons [33].…”

Section: Discussionmentioning

confidence: 99%

Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors

Scofield

Doerr

Fleetwood

1989

IEEE Trans. Nucl. Sci.

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“…This suggests that electron-trap centers are eliminated, which is in agreement with the observation in thermal oxide that electron traps are eliminated at high annealing temperatures. 24 However, at higher temperatures more hole trapping centers are generated in comparison with 900°C annealed oxide.…”

Section: Charge Trapping After Electrical Stress As Observed By C mentioning

confidence: 99%

Effect of annealing temperature on electrical stability of radio frequency magnetron sputtered silicon oxides

Jelenković¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The intention is to "heal" oxygen-deficient sites (defects) at the Si-SiO 2 interface. [7] For this portion of the work, we used wafers that had been oxidized by University Wafer because our oxidation furnaces were producing unreliable samples (see Section 3.1).…”

Section: Attempt At Reduction Of Charging Via Oxygen Annealmentioning

confidence: 99%

Reduction in Susceptibility of MOS Devices to Radiation- and Electrically-Induced Defects

Trombetta¹

2012

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Reduction of electron and hole trapping in SiO2 by rapid thermal annealing

Abstract: Early stages in thin film metal-silicon and metal-SiO2 reactions under rapid thermal annealing conditions: The rapid thermal annealing/transmission electron microscopy technique

Cited by 63 publications

References 8 publications

Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors

Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors

Effect of annealing temperature on electrical stability of radio frequency magnetron sputtered silicon oxides

Reduction in Susceptibility of MOS Devices to Radiation- and Electrically-Induced Defects

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