Reduction of the Outgassing Segments and LWR Improvement for the Next Generation EUV Lithography

Masuda, Seiya; Tarutani, Shinji; Kamimura, Sou; Hirano, Shuuji; Hoshino, Wataru; Mizutani, Kazuyoshi

doi:10.2494/photopolymer.20.437

Cited by 20 publications

(19 citation statements)

References 14 publications

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“…On the other hand, the ratio of the sulfonium group to be decomposed for PSTS 0.7 (0.7 – x ) is larger than that of PSTS 0.5 (0.5 – x ), indicating more irradiation and a lower sensitivity for the PSTS 0.7 resist. Similar to CARs that increase contrast by increasing the proportion of quenchers, the PSTS 0.7 resist increases contrast by increasing the proportion of the reactive group but reduces sensitivity simultaneously.…”

Section: Resultsmentioning

confidence: 95%

Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography

Wang

Chen

et al. 2022

ACS Appl. Mater. Interfaces

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Nonchemically amplified resists based on triphenyl sulfonium triflate-modified polystyrene (PSTS) were prepared by a facile method of modification of polystyrene with sulfonium groups. The uploading of the sulfonium group can be well-controlled by changing the feed ratio of raw materials, resulting in PSTS0.5 and PSTS0.7 resists with sulfonium ratios of 50 and 70%, respectively. The optimum developer (methyl isobutyl ketone/ethanol = 1:7) is obtained by analyzing contrast curves of electron beam lithography (EBL). PSTS0.7 exhibits a better resolution (18 nm half-pitch (HP)) than the PSTS0.5 resist (20 nm HP) at the same developing conditions for EBL. This novel resist platform was further evaluated by extreme ultraviolet lithography, and patterning performance down to 13 nm HP at a dose of 186 mJ cm–2 with a line edge roughness of 2.8 nm was achieved. Our detailed study of the reaction and patterning mechanism suggests that the decomposition of the polar triflate and triphenyl sulfonium groups into nonpolar sulfide or polystyrene plays an important role in the solubility switch.

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Section: Resultsmentioning

confidence: 95%

Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography

Wang

Chen

et al. 2022

ACS Appl. Mater. Interfaces

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“…And recently PHS type polymers try to be applied to EUVL [4]. To investigate the effect of introduction of fluorine atoms, PHS type polymers with trifluorostyrene (TFSt) were synthesized.…”

Section: Resist Sensitivity Under Euv Exposure With Partially Fluorinmentioning

confidence: 99%

“…To solve this problem, many resist materials are intensively investigated [2][3][4]. Recently, there has been growing interested in an introduction of fluorine atoms to resist materials.…”

Section: Introductionmentioning

confidence: 99%

Development of partially fluorinated EUV-resist polymers for LER and sensitivity improvement

Sasaki

Yokokoji

Watanabe

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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In order to improve EUVL resist characteristics, especially sensitivity, we have investigated two types of partially fluorinated resist polymers. The one was side chain fluorinated PHS type resist polymers. The other was main chain fluorinated resist polymers. Poly (p-hydroxystyrene) (PHS) type polymers with trifluorostyrene (TFSt) were synthesized and characterized their sensitivity behavior. From this evaluation, we found that PHS contained TFSt unit had a high sensitivity, keeping their etching durability. We expect that TFSt unit can work to enhance the resist sensitivity in PHS based EUVL resist polymers. Main chain fluorinated polymers based FIT unit (FITMAd and FITAdOM) were synthesized. FITMAd and FITAdOM showed high sensitivity compared to non fluorinated reference sample. From molecular weight measurement, we infer that the polymer main chain of FITMAd can be decomposed by irradiating with EUV light. The outgassing of FITMAd and FITAdoM were measured. There is no big difference between the total outgassing of FIT polymers and that of non fluorinated acrylic sample. And small amount of Hydrogen fluoride (HF) were detected. We infer that FITMAd and FITAdOM are decomposed then HF is generated under EUV exposure. From these results, we expect that FIT unit can work to enhance the resist sensitivity and can act main chain decomposed resist unit in EUVL resist polymers.

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“…Under the aforementioned status for the research and development in EUV lithography, in the recent decade, researchers have been developing novel photoresists using acid labile groups incorporated into polymeric or molecular materials exploiting the chemical amplification mechanism [9][10][11]. Most polymers used today in photoresist formulations work with the mechanism of a side group deprotection and thus have limitations towards the further reduction of the formed structure dimensions since their LER is related to the size of the polymer chain [12,13]. Moreover, in lithographic materials that make use of polymer network formation mechanisms additional risks are encountered in the fabrication of small patterns related to their tendency for swelling during development [14].…”

Section: Introductionmentioning

confidence: 99%

Ultra-sensitive EUV resists based on acid-catalyzed polymer backbone breaking

Manouras

Kazazis

Koufakis

et al. 2018

Extreme Ultraviolet (EUV) Lithography IX

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The aim of the current work was to develop new sensitive polymeric materials for lithographic applications, focusing in particular to EUV lithography, where the main polymer chain is cleaved under the influence of photogenerated acid. Resist materials based on the cleavage of polymer main chain are in principle capable to create very small structures, to the dimensions of the monomers that they consist of. Nevertheless, in the case of the commonly used non-chemically amplified materials of this type issues like sensitivity and poor etch resistance limit their areas of application, whereas inadequate etch resistance and unsatisfactory process reliability are the usual problems encountered in acid catalyzed materials based on main chain scission. In our material design, the acid catalyzed chain cleavable polymers contain very sensitive moieties in their backbone while they remain intact in alkaline ambient. These newly synthesized polymers bear in addition suitable functional groups for the achievement of desirable lithographic characteristics (thermal stability, acceptable glass transition temperature, etch resistance, proper dissolution behavior, adhesion to the substrate). Our approach for achieving acceptable etch resistance, a main drawback in other main chain cleavable resists, is based on the introduction of polyaromatic hydrocarbons in the polymeric backbone, whereas the incorporation of an inorganic component further enhances the etch resistance. Single component systems can also be designed following the proposed approach by the incorporation of suitable PAGs and base quencher molecules in the main chain. Resist formulations based on a random copolymer designed according to the described rules evaluated in EUV exhibit ultrahigh sensitivity, capability for high-resolution patterning and overall processing characteristics that make them strong candidates upon further optimization.

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Reduction of the Outgassing Segments and LWR Improvement for the Next Generation EUV Lithography

Cited by 20 publications

References 14 publications

Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography

Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography

Development of partially fluorinated EUV-resist polymers for LER and sensitivity improvement

Ultra-sensitive EUV resists based on acid-catalyzed polymer backbone breaking

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