Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position

Hori, Masahiro; Taira, Keigo; Komatsubara, Akinori; Kumagai, Koji; Ono, Yukinori; Takenaka, Takashi; Endoh, Tetsuo; Shinada, Tetsuro

doi:10.1063/1.4733289

Cited by 9 publications

(4 citation statements)

References 15 publications

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“…1 The phenomenon of device fluctuations becomes increasingly important. One of the most significant issues in the scaling is the threshold voltage (V th ) fluctuation induced by the process or device structure; [1][2][3][4][5][6][7][8][9][10][11] especially the discretedopant in the channel induced random dopant fluctuation (RDF), 2 which is the major source of V th fluctuation. It has been magnified by the scaling of device size (or area) because the electrical characteristics of the device become more and more sensitive to the number of dopants in the channel.…”

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confidence: 99%

The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors

Hsieh

Chung

2012

Applied Physics Letters

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confidence: 99%

The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors

Hsieh

Chung

2012

Applied Physics Letters

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“…In this case, the domain spacing of the confined dopants was shown to be of the order of ≈100 μm with the potential to extend the process applicability into the sub‐100 nm range by using high‐resolution molds . In the limiting case, single‐ion implantation enables truly deterministic doping, in that the precise position of every implanted ion is predetermined . While this technique can potentially address the abovementioned challenge on a local scale, the energy consumption and slow throughput associated with the process makes scaling to wafer‐scale substrates cost‐prohibitive.…”

Section: Molecular Weight Composition and Domain Spacing Of The Ps‐mentioning

confidence: 99%

Large‐Area, Nanometer‐Scale Discrete Doping of Semiconductors via Block Copolymer Self‐Assembly

Popere

Russ

Heitsch

et al. 2015

Adv Materials Inter

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to the nanometer length scale (limited by lithography resolution and pattern fi delity). Additionally, the conventional ion implantation process entails severe crystal damage that can be ameliorated by thermal annealing, but only at the cost of nonuniform junctions resulting from uncontrolled thermal diffusion of the implanted ions.Reliable manufacturing of new ultra small-scale devices requires deterministic doping, i.e., control over the exact position of dopant atoms in semiconductor structures to produce the necessary ultrashallow, doped junctions with well-defi ned insulating areas. While monolayer doping, [4][5][6][7] delta-doping, [ 8 ] contact doping, [ 9 ] and related techniques afford unprecedented control over abrupt ultrashallow junctions (sub-5 nm), lateral confi nement of dopants in the x-y plane is not easily achieved. Recently, van der Wiel and co-workers demonstrated lateral confi nement of dopants using nanoimprint lithography. In this case, the domain spacing of the confi ned dopants was shown to be of the order of ≈100 µm with the potential to extend the process applicability into the sub-100 nm range by using highresolution molds. [ 10,11 ] In the limiting case, single-ion implantation enables truly deterministic doping, in that the precise position of every implanted ion is predetermined. [ 12 ] While this technique can potentially address the abovementioned challenge on a local scale, the energy consumption and slow throughput associated with the process makes scaling to waferscale substrates cost-prohibitive. Thus, there is a fundamental design limitation preventing the fabrication of controllably doped junctions on the nanometer length scale.In this work, we have developed a novel technique demonstrating discretely doped shallow junctions (<10 nm) over large areas (1 cm 2 ) based on block copolymer self-assembly ( Scheme 1 ). We show that control over the lateral dopant profi le in the x-y plane can be achieved by varying the size and the spacing of the block copolymer domains. Importantly, the concentration of dopants in the junctions can be easily tuned by varying the dopant precursor concentration in the block copolymer thin fi lms prior to thermal diffusion and dopant incorporation. This technique is based on the inclusion of a small molecule (SM) dopant precursor within the core of a block copolymer micelle in solution via hydrogen bonding, casting the preformed micelles onto the Si substrate followed by rapid thermal annealing to drive the dopant into the substrate, as shown in Scheme 1 . The boronic acid pinacol ester functionality has been previously demonstrated to effectively dope Si substrates upon thermal annealing. [ 4,5,13 ] PSb -P4VP was chosen as the block copolymer host given the ability of the pyridine nitrogen in P4VP to hydrogen bond to a variety of potential dopant precursors and the large difference in solubility of the blocks leading to uniform micelle formation. Three such block copolymers (P1, P2, and P3) with different Controlling the precise location of dopants ...

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“…To perform this type of quantum calculations, there are three necessary parameters: modulation of the hyperfine interaction length by gate voltage, control of "on-off" states for single donor, and the resonance flipping of nuclear spins by global magnetic field. Pla et al [16] reported the readout and control of 31 P spin in Si with 99.8% fidelity. Vrijen et al [17] presented in their work that Si/Ge epitaxial heterostructures were selected to control the single-phosphorus electron spin.…”

Section: Atom Control and Devices Designmentioning

confidence: 99%

“…When the gate length of MOSFET is only ~10 nm, the active channel region of devices will only contain several dopants, and the fluctuation in dopant number will generate much stronger random telegraph noise than the average threshold voltage [29] , [30]. Ohdomari group reported the phosphorus dopant array [6], As dopant array [31], and other dopants [32] in the silicon devices. It was found that the fluctuation of dopants increases the threshold voltage variation significantly ( Figure 5), making the circuitry consisting of these transistors less reliable.…”

Section: Dendrimers -Fundamentals and Applicationsmentioning

confidence: 99%

Dendrimers as Dopant Atom Carriers

Wu¹,

Dan²

2018

Dendrimers - Fundamentals and Applications

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Properties of modern semiconducting transistors and future electron or quantum devices are essentially determined by single dopant atoms. How to precisely control the individual dopant position is one of the key factors to advance these technologies. In this chapter, we first briefly introduce the research progress in single dopant devices. To fabricate single dopant devices at large scale, we then overview our previous propose to control the locations of single dopants by self-assembly of large molecules (polyglycerols) with each carrying one dopant atom. The synthesis process, doping properties, and challenges of the molecular doping technique will be thoroughly elaborated before we conclude this chapter.

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Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position

Cited by 9 publications

References 15 publications

The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors

The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors

Large‐Area, Nanometer‐Scale Discrete Doping of Semiconductors via Block Copolymer Self‐Assembly

Dendrimers as Dopant Atom Carriers

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