Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV % ) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV % ), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV % centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.
ObjectivesWe sought to clarify how large a proportion of fatal medical accidents can be considered to be caused by poor non-technical skills, and to support development of a policy to reduce number of such accidents by making recommendations about possible training requirements.DesignSummaries of reports of fatal medical accidents, published by the Japan Medical Safety Research Organization, were reviewed individually. Three experienced clinicians and one patient safety expert conducted the reviews to determine the cause of death. Views of the patient safety expert were given additional weight in the overall determination.SettingA total of 73 summary reports of fatal medical accidents were reviewed. These reports had been submitted by healthcare organisations across Japan to the Japan Medical Safety Research Organization between April 2010 and March 2013.Primary and secondary outcome measuresThe cause of death in fatal medical accidents, categorised into technical skills, non-technical skills and inevitable progress of disease were evaluated. Non-technical skills were further subdivided into situation awareness, decision making, communication, team working, leadership, managing stress and coping with fatigue.ResultsOverall, the cause of death was identified as non-technical skills in 34 cases (46.6%), disease progression in 33 cases (45.2%) and technical skills in two cases (5.5%). In two cases, no consensual determination could be achieved. Further categorisation of cases of non-technical skills were identified as 14 cases (41.2%) of problems with situation awareness, eight (23.5%) with team working and three (8.8%) with decision making. These three subcategories, or combinations of them, were identified as the cause of death in 33 cases (97.1%).ConclusionsPoor non-technical skills were considered to be a significant cause of adverse events in nearly half of the fatal medical accidents examined. Improving non-technical skills may be effective for reducing accidents, and training in particular subcategories of non-technical skills may be especially relevant.
As semiconductor device dimensions decrease, the individual impurity atom position becomes a critical factor in determining device performance. We fabricated transistors with ordered and random dopant distributions on one side of the channel and evaluated the transconductance to investigate the impact of discrete dopant positions on the electron transport properties. The largest transconductance was observed when dopants were placed on the drain side in an ordered distribution; this was attributed to the suppression of injection velocity degradation on the source side and the uniformity of the electrostatic potential. Thus, the control of discrete dopant positions could enhance the device performance.
To investigate the impact of only the dopant position on threshold voltage (Vth) in nanoscale field-effect transistors, we fabricated transistors with ordered dopant arrays and conventional random channel doping. Electrical measurements revealed that device performance could be enhanced by controlling the dopant position alone, despite varying dopant number according to a Poisson distribution. Furthermore, device-to-device fluctuations in Vth could be suppressed by implanting a heavier ion such as arsenic owing to the reduction of the projected ion struggling. The results of our study highlight potential improvements in device performance by controlling individual dopant positions.
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